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參數(shù)資料
| 型號： | PHF9NQ20 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | N-channel TrenchMOS transistor |
| 中文描述： | N溝道TrenchMOS晶體管 |
| 文件頁數(shù)： | 6/9頁 |
| 文件大?。?/td> | 113K |
| 代理商： | PHF9NQ20 |
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
PHX9NQ20T , PHF9NQ20T
Fig.13. Typical turn-on gate-charge characteristics.
V
GS
= f(Q
G
)
Fig.14. Typical reverse diode current.
I
F
= f(V
SDS
); conditions: V
GS
= 0 V; parameter T
j
Fig.15. Maximum permissible non-repetitive
avalanche current (I
) versus avalanche time (t
AV
);
unclamped inductive load
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
0
5
10
15
20
25
30
35
Gate charge, QG (nC)
Gate-source voltage, VGS (V)
ID = 9 A
Tj = 25 C
VDD = 40 V
VDD = 160 V
0.1
1
10
0.001
0.01
0.1
1
10
Avalanche time, t
AV
(ms)
Maximum Avalanche Current, I
AS
(A)
Tj prior to avalanche = 150 C
25 C
0
1
2
3
4
5
6
7
8
9
10
0
0.1
0.2
0.3
Source-Drain Voltage, VSDS (V)
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
Source-Drain Diode Current, IF (A)
Tj = 25 C
150 C
VGS = 0 V
November 2000
6
Rev 1.100
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PHF9NQ20T | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS transistor |
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