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參數(shù)資料
| 型號： | PHF9NQ20 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | N-channel TrenchMOS transistor |
| 中文描述： | N溝道TrenchMOS晶體管 |
| 文件頁數(shù)： | 8/9頁 |
| 文件大?。?/td> | 113K |
| 代理商： | PHF9NQ20 |
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
PHX9NQ20T , PHF9NQ20T
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.17. SOT186; The seating plane is electrically isolated from all terminals.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for F-pack envelopes.
3. Epoxy meets UL94 V0 at 1/8".
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT186
TO-220
0
5
10 mm
scale
Plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3 lead TO-220 exposed tabs
SOT186
A
A1
Q
c
Note
1. Terminal dimensions within this zone are uncontrolled. Terminals in this zone are not tinned.
D
D1
L
L2
L1
m
q
e1
e
b
w
M
1
2
3
E1
P
E
b1
UNIT
D
b1
D1
e
q
Q
P
L
c
L2
e1
A
5.08
mm
4.4
4.0
A1
2.9
2.5
b
0.9
0.7
1.5
1.3
0.55
0.38
17.0
16.4
7.9
7.5
E
10.2
9.6
5.7
5.3
E1
2.54
14.3
13.5
10
0.4
L1
(1)
4.8
4.0
1.4
1.2
4.4
4.0
w
3.2
3.0
m
0.9
0.5
DIMENSIONS (mm are the original dimensions)
97-06-11
November 2000
8
Rev 1.100
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