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參數(shù)資料
| 型號(hào)： | PHW45NQ10T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel TrenchMOS transistor(N溝道TrenchMOS 晶體管邏輯電平場(chǎng)效應(yīng)管) |
| 中文描述： | 47 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 文件頁數(shù)： | 10/11頁 |
| 文件大?。?/td> | 108K |
| 代理商： | PHW45NQ10T |
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
PHB45NQ10T, PHP45NQ10T
PHW45NQ10T
MECHANICAL DATA
Fig.19. SOT429; pin 2 connected to mounting base
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for SOT429 envelope.
3. Epoxy meets UL94 V0 at 1/8".
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT429
TO-247
98-04-07
99-08-04
0
10
20 mm
scale
Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247
SOT429
E
P
A
A1
β
w
M
b
1
2
3
e
e
b1
b2
c
Q
q
L
Y
R
D
S
L1
(1)
α
UNIT
A1
D
b
E
e
w
S
R
q
Q
P
L
Y
b2
b1
c
L1
(1)
DIMENSIONS (mm are the original dimensions)
A
β
α
mm
17
°
13
°
6
°
4
°
5.3
4.7
1.9
1.7
2.2
1.8
1.2
0.9
3.2
2.8
0.9
0.6
21
20
16
15
5.45
3.7
3.3
2.6
2.4
5.3
7.5
7.1
0.4
15.7
15.3
16
15
4.0
3.6
3.5
3.3
Note
1. Tinning of terminals are uncontrolled within zone L1.
August 1999
10
Rev 1.000
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