參數(shù)資料
型號： PHW45NQ10T
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： N-channel TrenchMOS transistor(N溝道TrenchMOS 晶體管邏輯電平場效應管)
中文描述： 47 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
文件頁數(shù)： 2/11頁
文件大?。?/td> 108K
代理商： PHW45NQ10T
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
PHB45NQ10T, PHP45NQ10T
PHW45NQ10T
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
E
AS
Non-repetitive avalanche
energy
CONDITIONS
Unclamped inductive load, I
= 40 A;
t
p
= 100
μ
s; T
j
prior to avalanche = 25C;
V
≤
25 V; R
GS
= 50
; V
GS
= 10 V; refer
to fig:15
MIN.
-
MAX.
260
UNIT
mJ
I
AS
Non-repetitive avalanche
current
-
47
A
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-mb
Thermal resistance junction
to mounting base
R
th j-a
Thermal resistance junction
to ambient
CONDITIONS
MIN.
-
TYP. MAX. UNIT
-
1
K/W
SOT78 package, in free air
SOT429 package, in free air
SOT404 package, pcb mounted, minimum
footprint
-
-
-
60
45
50
-
-
-
K/W
K/W
K/W
ELECTRICAL CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
GS(TO)
Gate threshold voltage
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA;
MIN.
100
89
2
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
-
-
-
3
4
-
-
-
6
22
25
-
68
0.02
100
0.05
10
-
500
61
-
13
-
25
-
18
-
72
-
69
-
58
-
3.5
-
4.5
-
V
V
V
V
V
T
j
= -55C
V
DS
= V
GS
; I
D
= 1 mA
T
j
= 175C
T
j
= -55C
R
DS(ON)
Drain-source on-state
resistance
Gate source leakage current V
GS
=
±
10 V; V
DS
= 0 V
Zero gate voltage drain
current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal drain inductance
V
GS
= 10 V; I
D
= 25 A
m
m
nA
μ
A
μ
A
nC
nC
nC
ns
ns
ns
ns
nH
nH
T
j
= 175C
I
GSS
I
DSS
V
DS
= 100 V; V
GS
= 0 V;
T
j
= 175C
Q
g(tot)
Q
gs
Q
gd
t
d on
t
r
t
d off
t
f
L
d
L
d
I
D
= 45 A; V
DD
= 80 V; V
GS
= 10 V
V
DD
= 50 V; R
D
= 1.8
;
V
= 10 V; R
G
= 5.6
Resistive load
Measured tab to centre of die
Measured from drain lead to centre of die
(SOT78 and SOT429 packages)
Measured from source lead to source
bond pad
L
s
Internal source inductance
-
7.5
-
nH
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Feedback capacitance
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
-
-
-
2600
340
195
-
-
-
pF
pF
pF
August 1999
2
Rev 1.000
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