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參數資料
| 型號： | PHX14NQ20T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel TrenchMOS transistor |
| 中文描述： | 7.6 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, TO-220, FPAK-3 |
| 文件頁數： | 5/9頁 |
| 文件大?。?/td> | 68K |
| 代理商： | PHX14NQ20T |
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
PHX14NQ20T , PHF14NQ20T
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
)
; conditions: V
DS
= 25 V; parameter T
j
Fig.8. Typical transconductance, T
= 25
C
.
g
fs
= f(I
D
); conditions: V
DS
= 25 V
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25
C
= f(T
j
); I
D
= 7 A; V
GS
= 10 V
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
Fig.11. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25
C; V
DS
= V
GS
Fig.12. Typical capacitances, C
, C
, C
rss
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
0
4
8
12
16
20
24
28
0
2
6
8
10
Gate-s4
Drain current, ID (A)
Tj = 25 C
150 C
VGS(TO) / V
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
-100
-50
0
50
100
150
Tj / C
max
typ
min
0
5
10
15
20
0
4
8
12
16
20
24
28
ID / (A)
Transconductance, gfs (S)
0
1
2
3
4
5
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
Sub-Threshold Conduction
typ
2%
98%
Rds(on) normalised to 25 deg C
0.5
1
1.5
2
2.5
-70
-20
30
Ths / deg C
80
130
a
10
100
1000
10000
0
10
Drain-Source Voltage, VDS (V)
20
30
40
Capacitances, Ciss, Coss, Crss (pF)
Ciss
Coss
Crss
November 2000
5
Rev 1.100
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