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參數(shù)資料
| 型號(hào)： | PHX45NQ11T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel TrenchMOS standard level FET |
| 中文描述： | 30.4 A, 110 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, TO-220F, FULL PACK-3 |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大小： | 93K |
| 代理商： | PHX45NQ11T |
PHX45NQ11T
N-channel TrenchMOS standard level FET
Rev. 01 — 17 May 2004
Product data
1.
Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a fully isolated encapsulated
plastic package using TrenchMOS technology.
1.2 Features
1.3 Applications
1.4 Quick reference data
2.
Pinning information
I
Low on-state resistance
I
Isolated package.
I
DC-to-DC converters
I
Switched-mode power supplies.
I
V
DS
≤
110 V
I
P
tot
≤
62.5 W
I
I
D
≤
30.4 A
I
R
DSon
≤
25 m
.
Table 1:
Pin
1
2
3
mb
Pinning - SOT186A (TO-220F) simplified outline and symbol
Description
Simplified outline
gate (g)
drain (d)
source (s)
mounting base;
isolated
Symbol
SOT186A (TO-220F)
MBK110
1
mb
2 3
s
d
g
mbb076
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PHX45NQ11T,127 | 功能描述:MOSFET TRENCHMOS (TM) FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHX4N40E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors Avalanche energy rated |
| PHX4N50E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Isolated version of PHP4N50E |
| PHX4N60E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors Avalanche energy rated |
| PHX4ND40E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors FREDFET, Avalanche energy rated |
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