參數(shù)資料
型號(hào): PIC16C62B
廠商: Microchip Technology Inc.
英文描述: 28-Pin 8-Bit CMOS Microcontrollers(28引腳,8位CMOS微控制器)
中文描述: 28引腳8位CMOS微控制器(28引腳,8位的CMOS微控制器)
文件頁數(shù): 85/120頁
文件大?。?/td> 2122K
代理商: PIC16C62B
1998 Microchip Technology Inc.
Preliminary
DS35008B-page 85
PIC16C62B/72A
13.2
DC Characteristics:
PIC16LC62B/72A-04 (Commercial, Industrial)
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature
0°C
T
A
+70°C
-40°C
Min
Typ
Max
Units
for commercial
for industrial
Conditions
T
A
+85°C
Param
No.
D001
Sym
Characteristic
V
DD
Supply Voltage
2.5
V
BOR
*
-
-
-
5.5
5.5
-
V
V
V
LP, XT, RC osc modes (DC - 4 MHz)
BOR enabled (Note 7)
D002*
V
DR
RAM Data Retention
Voltage
(Note 1)
V
DD
Start Voltage
to
ensure internal
Power-on Reset signal
V
DD
Rise Rate
to
ensure internal
Power-on Reset signal
Brown-out Reset
voltage trip point
Supply Current
(Note 2, 5)
1.5
D003
V
POR
-
V
SS
-
V
See section on Power-on Reset for details
D004*
D004A*
S
VDD
0.05
TBD
-
-
-
-
V/ms PWRT enabled (PWRTE bit clear)
PWRT disabled (PWRTE bit set)
See section on Power-on Reset for details
V
BODEN bit set
D005
V
BOR
3.65
-
4.35
D010
D010A
I
DD
-
-
2.0
22.5
3.8
48
mA
μ
A
XT, RC osc modes
F
OSC
= 4 MHz, V
DD
= 3.0V (Note 4)
LP
OSC
MODE
F
OSC
= 32 kHz, V
DD
= 3.0V, WDT disabled
V
DD
= 3.0V, WDT enabled, -40
°
C to +85
°
C
V
DD
= 3.0V, WDT disabled, 0
°
C to +70
°
C
V
DD
= 3.0V, WDT disabled, -40
°
C to +85
°
C
D020
D021
D021A
I
PD
Power-down Current
(Note 3, 5)
-
-
-
7.5
0.9
0.9
30
5
5
μ
A
μ
A
μ
A
D022*
D022A*
I
WDT
I
BOR
Module Differential
Current (Note 6)
Watchdog Timer
Brown-out Reset
-
-
6.0
TBD
20
200
μ
A
μ
A
WDTE
BIT
SET
, V
DD
= 4.0V
BODEN bit set, V
DD
= 5.0V
* These parameters are characterized but not tested.
Data in "Typ" column is at 5V, 25°C unless otherwise stated. These parameters are for design guidance only
and are not tested.
Note 1:
This is the limit to which V
DD
can be lowered without losing RAM data.
2:
The supply current is mainly a function of the operating voltage and frequency. Other factors such as I/O pin
loading and switching rate, oscillator type, internal code execution pattern, and temperature also have an
impact on the current consumption.
The test conditions for all I
DD
measurements in active operation mode are:
OSC1 = external square wave, from rail to rail; all I/O pins tristated, pulled to V
DD
,
MCLR = V
DD
; WDT enabled/disabled as specified.
3:
The power-down current in SLEEP mode does not depend on the oscillator type. Power-down current is
measured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to V
DD
and V
SS
.
4:
For RC osc mode, current through Rext is not included. The current through the resistor can be estimated by
the formula Ir = V
DD
/2Rext (mA) with Rext in kOhm.
5:
Timer1 oscillator (when enabled) adds approximately 20
μ
A to the specification. This value is from charac-
terization and is for design guidance only. This is not tested.
6:
The
current is the additional current consumed when this peripheral is enabled. This current should be
added to the base I
DD
or I
PD
measurement.
7:
This is the voltage where the device enters the Brown-out Reset. When BOR is enabled, the device will
perform a brown-out reset when V
DD
falls below V
BOR
.
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