參數(shù)資料
型號: PK60N256VLL100
廠商: Freescale Semiconductor
文件頁數(shù): 30/76頁
文件大?。?/td> 0K
描述: IC ARM CORTEX MCU 256K 100-LQFP
產(chǎn)品培訓(xùn)模塊: Kinetis® Cortex-M4 Microcontroller Family
標(biāo)準(zhǔn)包裝: 1
系列: Kinetis
核心處理器: ARM? Cortex?-M4
芯體尺寸: 32-位
速度: 100MHz
連通性: CAN,EBI/EMI,以太網(wǎng),I²C,IrDA,SDHC,SPI,UART/USART,USB,USB OTG
外圍設(shè)備: DMA,I²S,LVD,POR,PWM,WDT
輸入/輸出數(shù): 66
程序存儲器容量: 256KB(256K x 8)
程序存儲器類型: 閃存
RAM 容量: 64K x 8
電壓 - 電源 (Vcc/Vdd): 1.71 V ~ 3.6 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 25x16b,D/A 1x12b
振蕩器型: 內(nèi)部
工作溫度: -40°C ~ 105°C
封裝/外殼: 100-LQFP
包裝: 托盤
6.4.1.5 Write endurance to FlexRAM for EEPROM
When the FlexNVM partition code is not set to full data flash, the EEPROM data set size
can be set to any of several non-zero values.
The bytes not assigned to data flash via the FlexNVM partition code are used by the flash
memory module to obtain an effective endurance increase for the EEPROM data. The
built-in EEPROM record management system raises the number of program/erase cycles
that can be attained prior to device wear-out by cycling the EEPROM data through a
larger EEPROM NVM storage space.
While different partitions of the FlexNVM are available, the intention is that a single
choice for the FlexNVM partition code and EEPROM data set size is used throughout the
entire lifetime of a given application. The EEPROM endurance equation and graph
shown below assume that only one configuration is ever used.
Writes_subsystem =
× Write_efficiency × n
EEPROM – 2 × EEESPLIT × EEESIZE
EEESPLIT × EEESIZE
nvmcycd
where
Writes_subsystem — minimum number of writes to each FlexRAM location for
subsystem (each subsystem can have different endurance)
EEPROM — allocated FlexNVM for each EEPROM subsystem based on DEPART;
entered with the Program Partition command
EEESPLIT — FlexRAM split factor for subsystem; entered with the Program
Partition command
EEESIZE — allocated FlexRAM based on DEPART; entered with the Program
Partition command
Write_efficiency —
0.25 for 8-bit writes to FlexRAM
0.50 for 16-bit or 32-bit writes to FlexRAM
nnvmcycd — data flash cycling endurance (the following graph assumes 10,000
cycles)
Peripheral operating requirements and behaviors
K60 Sub-Family Data Sheet Data Sheet, Rev. 7, 02/2013.
36
Freescale Semiconductor, Inc.
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