參數(shù)資料
型號: PS20351-G
廠商: POWEREX INC
元件分類: 運動控制電子
英文描述: Intellimod⑩ Module Dual-In-Line Intelligent Power Module 3 Amperes/500 Volts
中文描述: AC MOTOR CONTROLLER, 6 A, UFM26
封裝: POWER, MINI, DIP-26
文件頁數(shù): 2/9頁
文件大?。?/td> 183K
代理商: PS20351-G
MITSUBISHI SEMICONDUCTOR <Intelligent Power Module>
PS20351-N
TRANSFER-MOLD TYPE
INSULATED TYPE
Sep. 2001
Fig. 2 INTERNAL FUNCTIONS BLOCK DIAGRAM (TYPICAL APPLICATION EXAMPLE)
Fig. 3 EXTERNAL PART OF THE DIP-IPM PROTECTION CIRCUIT
Z
Drive circuit
C
C
C
C
C
C
(15V line)
Low-side input (PWM)
(Note 1, 2)
V
D
V
NC
V
NC
W
AC input
AC line output
V
U
Input signal
Level shifter
Drive circuit
Protection
circuit (UV)
Input signal
Input signal
Input signal conditioning
Fo logic
proSC
Protection
circuit (UV)
Protection
circuit (UV)
Cprotection
Drive circuit Drive circuit
F
O
CFO
P
N
1
N
F
O
output (5V line)
(Note 3, 5)
High-side input (PWM)
(5V line)
(Note 1,2)
M
(Note 6)
DIP-IPM
C
C4
C3
C3 : Tight tolerance, temp-compensated electrolytic type
(Note : The capacitance value depends on the PWM control
scheme used in the applied system).
C4 : 0.22~2
μ
F R-category ceramic capacitor for noise filtering.
Note1:
To prevent the input signals oscillation, an RC coupling at each input is recommended. (see also Fig. 6)
2:
By virtue of integrating an application specific type HVIC inside the module, direct coupling to CPU terminals without any opto-coupler or transformer
isolation is possible. (see also Fig. 6)
3:
This output is open collector type. The signal line should be pulled up to the positive side of the 5V power supply with approximately 5.1k
resistance.
(see also Fig. 6)
4:
The wiring between the power DC link capacitor and the P/N1 terminals should be as short as possible to protect the DIP-IPM against catastrophic high
surge voltages. For extra precaution, a small film type snubber capacitor (0.1~0.22
μ
F, high voltage type) is recommended to be mounted close to
these P and N1 DC power input terminals.
5:
Fo output pulse width should be decided by connecting external capacitor between CFO and V
NC
terminals. (Example : C
FO
=22nF
t
FO
=1.8ms (Typ.))
6:
High voltage (600V or more) and fast recovery type (less than 100ns) diodes should be used in the bootstrap circuit.
L-side IGBT
S
CIN
(Note 4)
Fig. 3
Inrush current
limiter circuit
Level shifter Level shifter
H-side IGBT
S
Z : ZNR (Surge absorber)
C : AC filter (Ceramic capacitor 2.2~6.5nF)
(Note : Additionally, an appropriate line to line
surge absorber circuit may become necessary
depending on the application environment.)
Note1:
In the recommended external protection circuit, please select the RC time constant in the range 1.5~2.0
μ
s.
2:
To prevent erroneous protection operation, the wiring of A, B, C should be as short as possible.
Drive circuit
Drive circuit
Protection circuit
W
V
U
B
C
V
NC
CIN
A
P
N1
N
CR
Shunt Resistor
External protection circuit
DIP-IPM
L-side IGBT
S
H-side IGBT
S
SC Protection
Trip Level
I
C
(A)
2
0
Short Circuit Protective Function (SC) :
SC protection is achieved by sensing the L-side DC-Bus current (through the external
shunt resistor) after allowing a suitable filtering time (defined by the RC circuit).
When the sensed shunt voltage exceeds the SC trip-level, all the L-side IGBTs are turned
OFF and a fault signal (Fo) is output. Since the SC fault may be repetitive, it is
recommended to stop the system when the Fo signal is received and check the fault.
Collector current
waveform
t
w
(
μ
s)
(Note 1)
(Note 2)
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