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參數(shù)資料
| 型號(hào)： | PTF10193 |
| 廠商： | ERICSSON |
| 英文描述： | 12 Watts, 860-960 MHz GOLDMOS⑩ Field Effect Transistor |
| 中文描述： | 12瓦，860-960兆赫GOLDMOS⑩場(chǎng)效應(yīng)晶體管 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 331K |
| 代理商： | PTF10193 |
1
PTF 10193
12 Watts, 860-960 MHz
GOLDMOS
Field Effect Transistor
0
4
8
12
16
20
0.0
0.2
0.4
0.6
Input Power (Watts)
O
20
30
40
50
60
70
E
x
V
DD
= 26 V
I
DQ
= 160 mA
f = 960 MHz
Typical Output Power & Efficiency vs.
Input Power
Output Power
Efficiency
INTERNALLY MATCHED
Performance at 960 MHz, 26 Volts
- Output Power = 12 Watts
- Efficiency = 60% Typ
- Power Gain = 18 dB Typ
Full Gold Metallization
Silicon Nitride Passivated
Surface Mountable
Available in Tape and Reel
100% Lot Traceability
Description
The PTF 10193 is an internally matched, 12–watt
GOLDMOS
FET
intended for GSM, CDMA and TDMA amplifier applications from 860
to 960 MHz. This device operates at 60% efficiency with 18 dB typical
gain. Nitride surface passivation and full gold metallization ensure
excellent device lifetime and reliability.
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Common Source Power Gain
(V
DD
= 26 V, P
OUT
= 12 W, I
DQ
= 160 mA, f = 960 MHz)
Power Output at 1 dB Compressed
(V
DD
= 26 V, I
DQ
= 160 mA, f = 960 MHz)
Drain Efficiency
(V
DD
= 26 V, P
OUT
= 12 W, I
DQ
= 160 mA, f = 960 MHz)
Load Mismatch Tolerance
(V
DD
= 26 V, P
OUT
= 12 W, I
DQ
= 160 mA, f = 921 MHz
—all phase angles at frequency of test)
G
ps
17.0
18
—
dB
P-1dB
12
14
—
Watts
55
60
—
%
—
—
10:1
—
All published data at T
CASE
= 25°C unless otherwise indicated.
A-1234560008
Package 20259
10193
1234560008A
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PTF10195 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:125 Watts, 869-894 MHz GOLDMOS Field Effect Transistor |
| PTF102002 | 功能描述:射頻放大器 RF LDMOS Transistor RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTF102003 | 功能描述:射頻放大器 RF LDMOS Transistor RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTF102015 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 65V V(BR)DSS | SOT-391VAR |
| PTF-102-01-L-D | 制造商:Samtec Inc 功能描述:PRESS FIT SOCKET ASSEMBLY - Bulk |
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