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參數(shù)資料
| 型號： | PTF10195 |
| 廠商： | ERICSSON |
| 英文描述： | 125 Watts, 869-894 MHz GOLDMOS Field Effect Transistor |
| 中文描述： | 125瓦，869-894兆赫GOLDMOS場效應(yīng)晶體管 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 328K |
| 代理商： | PTF10195 |
1
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
DD
= 28 V, P
OUT
= 125 W, I
DQ
= 1300 mA, f = 894 MHz)
Power Output at 1 dB Compression
(V
DD
= 28 V, I
DQ
= 1300 mA, f = 894 MHz)
Drain Efficiency
(V
DD
= 28 V, P
OUT
= 125 W, I
DQ
= 1300 mA, f = 894 MHz)
Load Mismatch Tolerance
(V
DD
= 28 V, P
OUT
= 125 W, I
DQ
= 1300 mA, f = 894 MHz
—all phase angles at frequency of test)
G
pe
13
14
—
dB
P-1dB
125
140
—
Watts
45
53
—
%
10:1
—
—
—
All published data at T
CASE
= 25°C unless otherwise indicated.
Description
The 10195 is an internally matched 125–watt
GOLDMOS
FET intended
for cellular, GSM, D-AMPS, CDMA and EDGE applications. This device
operates at 53% efficiency with 13 dB of gain minimum. Full gold
metallization ensures excellent device lifetime and reliability.
PTF 10195
125 Watts, 869–894 MHz
GOLDMOS
Field Effect Transistor
12345600-A
0
20
40
60
80
100
120
140
160
0
1
2
3
4
5
6
Input Power (Watts)
P
0
8
16
24
32
40
48
56
64
E
V
DD
= 28 V
I
DQ
= 1.3 A
f = 894 MHz
Typical Power Output and Efficiency
vs. Input Power
Efficiency
Power Output
Package 20248
INTERNALLY MATCHED
Performance at 894 MHz, 28 Volts
- Output Power = 125 Watts
- Power Gain = 14 dB Typical
- Efficiency = 53% Typical
Full Gold Metallization
Excellent Thermal Stability
100% Lot Traceability
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|---|---|
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