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參數(shù)資料
| 型號： | PTF180101S |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz |
| 中文描述： | LDMOS射頻功率場效應(yīng)晶體管10瓦，1805至1880年兆赫，1930-1990 MHz的10瓦，2110年至二一七〇年兆赫 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 310K |
| 代理商： | PTF180101S |
Data Sheet
1
2004-02-03
EDGE EVM Performance
EVM and Efficiency vs. Output Power
V
DD
= 28 V, I
DQ
= 0.18 A, f = 1989.8 MHz
0
1
2
3
4
25
30
Output Power (dBm)
35
40
E
0
10
20
30
40
E
EVM
Efficiency
PTF180101
Features
Typical EDGE performance
- Average output power = 4.0 W
- Gain = 19.0 dB
- Efficiency = 28%
- EVM = 1.1 %
Typical WCDMA performance
- Average output power = 1.8 W
- Gain = 18.0 dB
- Efficiency = 20%
- ACPR = –45 dBc
Typical CW performance
- Output power at P–1dB = 15 W
- Efficiency = 50%
Integrated ESD protection:
Human Body Model Class 1 (minimum)
Excellent thermal stability
Low HCI drift
Capable of handling 10:1 VSWR @ 28 V,
10 W (CW) output power
RF Characteristics, EDGE Operation
at T
CASE
= 25°C unless otherwise indicated
EDGE Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 180 mA, P
OUT
= 4 W, f = 1989.8 MHz
Characteristic
Error Vector Magnitude
Modulation Spectrum @ 400 kHz
Modulation Spectrum @ 600 kHz
Gain
Drain Efficiency
Symbol
EVM (RMS)
ACPR
ACPR
G
ps
η
D
Min
—
—
—
—
—
Typ
1.1
–60
–70
19
28
Max
—
—
—
—
—
Units
%
dBc
dBc
dB
%
Two–Tone Measurements
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 180 mA, P
OUT
= 10 W PEP, f = 1990 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
η
D
IMD
Min
18
30
—
Typ
19
33
–30
Max
—
—
–28
Units
dB
%
dBc
LDMOS RF Power Field Effect Transistor
10 W, 1805–1880 MHz, 1930–1990 MHz
10 W, 2110–2170 MHz
Description
The PTF180101 is a 10 W, internally–matched
GOLDMOS
FET device in-
tended for EDGE applications in the DCS/PCS band. Full gold metallization
ensures excellent device lifetime and reliability.
ESD:
Electrostatic discharge sensitive device — observe handling precautions!
PTF180101S
Package 32259
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PTF180601 | LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805-1880 MHz, 1930-1990 MHz |
| PTF180601C | LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805-1880 MHz, 1930-1990 MHz |
| PTF180601E | LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805-1880 MHz, 1930-1990 MHz |
| PTF180901E | GSM/EDGE RF Power FET |
| PTF180901F | GSM/EDGE RF Power FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PTF180101S V1 | 功能描述:射頻MOSFET電源晶體管 Hi Pwr RF LDMOS FET 10W 1805-1880 MHz RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| PTF180101SV1 | 制造商:Infineon Technologies AG 功能描述: |
| PTF180101SV1XTMA1 | 制造商:Infineon Technologies AG 功能描述:RFP-LDMOS GOLDMOS 3 & 7 - Tape and Reel |
| PTF180301EV1 | 功能描述:射頻MOSFET電源晶體管 RFP-LDMOS GLDMOS3&7 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| PTF180301EV1R250 | 功能描述:射頻MOSFET電源晶體管 RFP-LDMOS GLDMOS3&7 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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