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參數(shù)資料
| 型號(hào)： | PTF180601 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805-1880 MHz, 1930-1990 MHz |
| 中文描述： | LDMOS的場(chǎng)效應(yīng)晶體管60瓦，DCS / PCS的兆赫波段1805至80年，1930-1990兆赫 |
| 文件頁(yè)數(shù)： | 5/11頁(yè) |
| 文件大?。?/td> | 233K |
| 代理商： | PTF180601 |
Data Sheet
5
2004-05-03
PTF180601
0.95
0.96
0.97
0.98
0.99
1.00
1.01
1.02
1.03
-20
0
20
40
60
80
100
Case Temperature (°C)
N
0.40
1.53
2.67
3.80
4.93
6.07
Gate-Source Voltage vs. Case Temperature
Voltage normalized to typical gate voltage.
Series show current.
Typical Performance
(cont.)
44
45
46
47
48
49
50
22
24
26
28
30
32
Supply Voltage (V)
O
Output Power vs. Supply Voltage
I
DQ
= 0.8 A, f = 1990 MHz
-80
-70
-60
-50
-40
-30
-20
32
34
36
38
40
42
44
46
48
Output Power, PEP (dBm)
I
Intermodulation Distortion vs. Output Power
V
DD
= 28 V, I
DQ
= 0.8 A, F
1
= 1990 MHz, F
2
= 1991 MHz
3rd Order
7th Order
5th Order
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PTF180601C | LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805-1880 MHz, 1930-1990 MHz |
| PTF180601E | LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805-1880 MHz, 1930-1990 MHz |
| PTF180901E | GSM/EDGE RF Power FET |
| PTF180901F | GSM/EDGE RF Power FET |
| PTF181301 | LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PTF180601C | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805-1880 MHz, 1930-1990 MHz |
| PTF180601E | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805-1880 MHz, 1930-1990 MHz |
| PTF180901E | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:GSM/EDGE RF Power FET |
| PTF180901F | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:GSM/EDGE RF Power FET |
| PTF181301 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz |
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