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參數(shù)資料
| 型號(hào)： | PTF180601E |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805-1880 MHz, 1930-1990 MHz |
| 中文描述： | LDMOS的場(chǎng)效應(yīng)晶體管60瓦，DCS / PCS的兆赫波段1805至80年，1930-1990兆赫 |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 233K |
| 代理商： | PTF180601E |
Data Sheet
1
2004-05-03
0
1
2
3
4
35
37
39
41
43
45
Output Power (dBm)
E
.
0
10
20
30
40
E
EDGE EVM Performance
EVM & Efficiency vs. Power Output
V
DD
= 28 V, I
DQ
= 0.8 A, f = 1989.8 MHz
EVM
Efficiency
PTF180601C
Package 21248
LDMOS Field Effect Transistor
60 W, DCS/PCS Band
1805–1880 MHz, 1930–1990 MHz
Description
The PTF180601 is a 60 W, internally matched
GOLDMOS
FET intended for
EDGE applications in the DCS/PCS Band. Full gold metallization ensures
excellent device lifetime and reliability.
Features
Broadband internal matching
Typical two-tone performance
- Average output power = 30 W
- Gain = 16.5 dB
- Efficiency = 35%
Typical CW performance
- Output power at P–1dB = 75 W
- Gain = 15.5 dB
- Efficiency = 47%
Integrated ESD protection: Human Body
Model, Class 1 (minimum)
Excellent thermal stability
Low HCI Drift
Capable of handling 10:1 VSWR @ 28 V,
60 W (CW) output power
PTF180601
RF Characteristics
at T
CASE
= 25°C unless otherwise indicated
EDGE Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 800 mA, P
OUT
= 22 W, f = 1989.8 MHz
Characteristic
Error Vector Magnitude
Modulation Spectrum @ 400 KHz
Modulation Spectrum @ 600 KHz
Gain
Drain Efficiency
Symbol
EVM (RMS)
ACPR
ACPR
G
ps
η
D
Min
—
—
—
—
—
Typ
1.7
–60
–73
16.5
32
Max
—
—
—
—
—
Units
%
dBc
dBc
dB
%
Two–Tone Measurements
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 800 mA, P
OUT
= 60 W PEP, f = 1930 MHz, Tone Spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
η
D
IMD
Min
15
30
—
Typ
16.5
35
–30
Max
—
—
–28
Units
dB
%
dBc
ESD:
Electrostatic discharge sensitive device — observe handling precautions!
PTF180601E
Package 30248
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| PTF180901E | GSM/EDGE RF Power FET |
| PTF180901F | GSM/EDGE RF Power FET |
| PTF181301 | LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PTF180901E | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:GSM/EDGE RF Power FET |
| PTF180901F | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:GSM/EDGE RF Power FET |
| PTF181301 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz |
| PTF181301A | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz |
| PTF18PSPS | 功能描述:CBL ASSY TFX UHFM UHFM RoHS:是 類別:電纜組件 >> 同軸，RF 系列:* 標(biāo)準(zhǔn)包裝:1 系列:- 類型:母型至公型 樣式:BNC 至 N 型 第一連接器:BNC 公插頭 第二連接器:N 母插孔 長(zhǎng)度:- 纜線類型:- 阻抗:- 頻率 - 最大:- 顏色:- 特點(diǎn):- 工作溫度:- 其它名稱:RAD-CON-N-BNC-BS |
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