參數(shù)資料
型號(hào)： PTF180901F
廠商： INFINEON TECHNOLOGIES AG
英文描述： GSM/EDGE RF Power FET
中文描述： GSM / EDGE的射頻功率場(chǎng)效應(yīng)管
文件頁數(shù)： 1/2頁
文件大?。?/td> 169K
代理商： PTF180901F
N e v e r s t o p t h i n k i n g .
The PTF180901
One of our new line of GSM/EDGE/CDMA2000 devices, the PTF180901
is optimized for the DCS and PCS bands. This device operates at 47%
efficiency with 13.5 dB of gain and produces 115 W,
P
-1dB
. This high-gain
high-efficiency device is ideal to power your amplifier design.
A laterally diffused single-ended GOLDMOS
FET, it incorporates full
gold metallization and integrated ESD protection to ensure excellent
lifetime and reliability.
Features
■
Optimized for bandwidths 1805 MHz – 1880 MHz and
1930 MHz – 1990 MHz
■
Improved ruggedness
■
Broadband internal matching
■
Full gold metallization
■
Integrated ESD protection: Human Body Model, Class 1 (minimum)
■
Excellent thermal stability
■
Low HCI drift
■
Capable of handling 10:1 VSWR@28 V, 90 W (CW) output power
www.infineon.com/wireless
PTF180901
GSM/EDGE RF Power FET
Wireless Communication
Product Brief
Performance
■
Typical EDGE performance
– Average output power = 35 W
– Gain = 14.5 dB
– Efficiency = 32%
– EVM = 1.7% AVG
– ACPR@400 KHz = -60 dBc
– ACPR@600 KHz = -74 dBc
■
Typical two-tone performance
– Output power = 90 W PEP
– Gain = 15 dB
– Efficiency = 36%
– IM3 = -30 dBc
– 1 MHz tone spacing
Type List
Type
PTF180901E
PTF180901F
Output Power
90 W
90 W
Gain
15 dB
15 dB
Supply Voltage Package Type
28 V
28 V
Package
30248
31248
Thermally enhanced
Thermally enhanced,
earless
相關(guān)PDF資料
PDF描述
PTF181301 LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz
PTF181301A LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz
PTF191601 LDMOS RF Power Field Effect Transistor 160 W, 1930-1990 MHz
PTF191601E LDMOS RF Power Field Effect Transistor 160 W, 1930-1990 MHz
PTF210301 LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PTF181301 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz
PTF181301A 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz
PTF18PSPS 功能描述:CBL ASSY TFX UHFM UHFM RoHS:是 類別:電纜組件 >> 同軸，RF 系列:* 標(biāo)準(zhǔn)包裝:1 系列:- 類型:母型至公型 樣式:BNC 至 N 型 第一連接器:BNC 公插頭 第二連接器:N 母插孔 長(zhǎng)度:- 纜線類型:- 阻抗:- 頻率 - 最大:- 顏色:- 特點(diǎn):- 工作溫度:- 其它名稱:RAD-CON-N-BNC-BS
PTF191601 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 160 W, 1930-1990 MHz
PTF191601E 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930-1990 MHz
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