參數(shù)資料
型號(hào)： PTF191601
廠商： INFINEON TECHNOLOGIES AG
英文描述： LDMOS RF Power Field Effect Transistor 160 W, 1930-1990 MHz
中文描述： LDMOS射頻功率場(chǎng)效應(yīng)晶體管160瓦，1930-1990兆赫
文件頁(yè)數(shù)： 1/4頁(yè)
文件大小： 61K
代理商： PTF191601
Developmental Data Sheet
1 of 4
2004-03-17
Typical EDGE EVM Performance
V
DD
= 28 V, I
DQ
= 2.2 A, f = 1989.1 MHz
0
1
2
3
4
30
35
40
45
50
55
Output Power (dBm)
E
.
0
5
10
15
20
25
30
35
40
D
EVM
Efficiency
Advance Information
PTF191601
LDMOS RF Power Field Effect Transistor
160 W, 1930 – 1990 MHz
Features
Broadband internal matching
Typical EDGE performance
- Average output power = 62 W
- Gain = 14 dB
- Efficiency = 32%
- EVM = 1.7%
Typical CW performance
- Output power at P–1dB = 180 W
- Gain = 13 dB
- Efficiency = 47%
Integrated ESD protection: Human Body
Model, Class 1 (minimum)
Excellent thermal stability
Low HCI drift
Capable of handling 10:1 VSWR @ 28 V,
160 W (CW) output power
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Description
The PTF191601 is a 160 W, internally matched
GOLDMOS
FET intended
for GSM and EDGE applications in the 1930 to 1990 MHz band. Full gold
metallization ensures excellent device lifetime and reliability.
PTF191601E
Package 30260
RF Characteristics
at T
CASE
= 25°C unless otherwise indicated
EDGE Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 2.2 A, P
OUT
= 62 W, f = 1989.8 MHz
Characteristic
Error Vector Magnitude
Modulation Spectrum @ 400 kHz
Modulation Spectrum @ 600 kHz
Gain
Drain Efficiency
Symbol
EVM (RMS)
ACPR
ACPR
G
ps
η
D
Min
—
—
—
—
—
Typ
1.7
–60
–73
14
32
Max
—
—
—
—
—
Units
%
dBc
dBc
dB
%
Two–Tone Measurements
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 2.2 A, P
OUT
= 160 W PEP, f = 1990 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
η
D
IMD
Min
—
—
—
Typ
14
36
–30
Max
—
—
—
Units
dB
%
dBc
相關(guān)PDF資料
PDF描述
PTF191601E LDMOS RF Power Field Effect Transistor 160 W, 1930-1990 MHz
PTF210301 LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz
PTF210301A LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz
PTF210301E LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz
PTF210451E BASIC SWITCH
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PTF191601E 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930-1990 MHz
PTF191601EV1X 制造商:Infineon Technologies AG 功能描述:Trans RF MOSFET 65V 3-Pin Case 30260
PTF191601F 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930-1990 MHz
PTF20024 制造商:TE Connectivity 功能描述:RELAY FASTON DPCO 15A 24VDC 制造商:TE Connectivity 功能描述:RELAY, FASTON, DPCO, 15A, 24VDC 制造商:TE Connectivity 功能描述:Mini DPDT 10A plug-in power relay, 24Vdc
PTF20524 制造商:TE Connectivity 功能描述:RELAY FASTON DPCO 15A 24VAC 制造商:TE Connectivity 功能描述:RELAY, FASTON, DPCO, 15A, 24VAC 制造商:TE Connectivity 功能描述:RELAY, FASTON, DPCO, 15A, 24VAC; Relay Type:General Purpose; Coil Voltage VAC Nom:24V; Contact Current Max:15A; Contact Voltage AC Nom:250V; Contact Voltage DC Nom:24V; Coil Resistance:192ohm; Contact Configuration:DPCO; Coil ;RoHS Compliant: Yes
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