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參數(shù)資料
| 型號： | PTF180901F |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | GSM/EDGE RF Power FET |
| 中文描述： | GSM / EDGE的射頻功率場效應管 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 169K |
| 代理商： | PTF180901F |
Published by Infineon Technologies AG
Product Brief
How to reach us:
http://www.infineon.com
Published by
Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81669 München
Infineon Technologies AG 2004.
All Rights Reserved.
Template: pb_tmplt.fm/4/2004-01-01
Attention please!
The information herein is given to describe certain components
and shall not be considered as a guarantee of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not
limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Information
For further information on technology, delivery terms
and conditions and prices please contact your nearest
Infineon Technologies Office.
Warnings
Due to technical requirements components may contain dangerous
substances. For information on the types in question please contact
your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-
support devices or systems with the express written approval of
Infineon Technologies, if a failure of such components can reason-
ably be expected to cause the failure of that life-support device or
system, or to affect the safety or effectiveness of that device or sys-
tem. Life support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume
that the health of the user or other persons may be endangered.
30
0
0
A
D
dBm
Output Power
V
DD
= 28 V,
I
DQ
= 1.2 A,
f
C
= 1989.1 MHz
Efficiency
0.5
1.0
1.5
2.0
2.5
3.0
%
4.0
5
10
15
20
25
30
%
40
35
40
45
50
EVM
Typical EDGE EVM Performance
Performance
Characteristics
Application Example
+11.7 dBm
+30.7 dBm
PTF180901
PTF180101S
45.2 dBm
EDGE
P
= 15 W
Gain= 19 dB
EVM = 1.1%
P
= 115 W
Gain = 14.5 dB
EVM = 1.7%
ACPR @ 400 kHz = -60 dBc
ACPR @ 600 kHz = -74 dBc
V
DD
= 28 V
EDGE 1930 - 1990 MHz
Output Power 33 W
Ordering No. B134-H8296-X-0-7600
Printed in Germany
PS 0104.5
NB
Two-Tone Measurements
V
DD
= 28 V,
I
DQ
= 1.2 A,
P
OUT
= 90 W PEP,
f
C
= 1930 MHz, Tone Spacing = 100 kHz
Characteristic
Symbol
Gain
G
ps
Drain Efficiency
η
D
Intermodulation Distortion
IMD
Min.
14
30
–
Typ.
15
36
-30
Max.
–
–
-28
Units
dB
%
dBc
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| PTF181301 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz |
| PTF181301A | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz |
| PTF18PSPS | 功能描述:CBL ASSY TFX UHFM UHFM RoHS:是 類別:電纜組件 >> 同軸，RF 系列:* 標準包裝:1 系列:- 類型:母型至公型 樣式:BNC 至 N 型 第一連接器:BNC 公插頭 第二連接器:N 母插孔 長度:- 纜線類型:- 阻抗:- 頻率 - 最大:- 顏色:- 特點:- 工作溫度:- 其它名稱:RAD-CON-N-BNC-BS |
| PTF191601 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 160 W, 1930-1990 MHz |
| PTF191601E | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930-1990 MHz |
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