參數(shù)資料
型號： PTF210451E
廠商： INFINEON TECHNOLOGIES AG
英文描述： BASIC SWITCH
中文描述： LDMOS射頻功率場效應(yīng)晶體管45瓦，二一一〇年至2170年兆赫
文件頁數(shù)： 1/8頁
文件大?。?/td> 406K
代理商： PTF210451E
Data Sheet
1
2003-12-22
PTF210451E
Package 30265
Two–Carrier WCDMA Drive-Up
V
DD
= 28 V, I
DQ
= 500 mA, f = 2140 MHz, 3GPP WCDMA
signal, P/A R = 8 dB, 10 MHz carrier spacing
-55
-50
-45
-40
-35
-30
30
32
34
36
38
40
42
Average Output Power (dBm)
I
5
10
15
20
25
30
D
IM3
ACPR
Efficiency
LDMOS RF Power Field Effect Transistor
45 W, 2110–2170 MHz
Description
The PTF210451 is a 45 W internally matched
GOLDMOS
FET
intended for WCDMA applications from 2110 to 2170 MHz. Full gold
metallization ensures excellent device lifetime and reliability.
Features
Internal matching for wideband performance
Typical two–carrier WCDMA performance
- Average output power = 11.5 W
- Gain = 14 dB
- Efficiency = 27%
- IM3 = –37 dBc
Typical CW performance
- Output power at P–1dB = 50 W
- Linear gain = 14 dB
- Efficiency = 53%
Integrated ESD protection: Human Body Model,
Class 1 (minimum)
Excellent thermal stability
Low HCI Drift
Capable of handling 10:1 VSWR @ 28 V,
45 W (CW) output power
RF Performance
at T
CASE
= 25°C unless otherwise indicated
WCDMA Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 500 mA, P
OUT
= 11.5 W AVG
f
1
= 2140 MHz, f
2
= 2150 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8
dB @ 0.01% CCDF
Characteristic
Symbol
Min
Typ
Max
Units
Intermodulation Distortion
IMD
—
–37
—
dBc
Gain
G
ps
η
D
—
14
—
dB
Drain Efficiency
—
27
—
%
Two–Tone Measurements
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 500 mA, P
OUT
= 45 W PEP, f = 2170 MHz, Tone Spacing = 1 MHz
Characteristic
Symbol
Min
Typ
Max
Units
Gain
G
ps
η
D
IMD
13
14
—
dB
Drain Efficiency
35
38
—
%
Intermodulation Distortion
—
–32
–30
dBc
PTF210451
ESD:
Electrostatic discharge sensitive device — observe handling precautions!
相關(guān)PDF資料
PDF描述
PTF210451 LDMOS RF Power Field Effect Transistor 45 W, 2110-2170 MHz
PTF210901 LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz
PTF210901E LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz
PTF211301 LDMOS RF Power Field Effect Transistor 130 W, 2110-2170 MHz
PTF211301A LDMOS RF Power Field Effect Transistor 130 W, 2110-2170 MHz
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PTF210451E V1 功能描述:射頻MOSFET電源晶體管 TRANS MOSFET N-CH 65V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
PTF210451F 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2010 – 2025 MHz and 2110 – 2170 MHz
PTF210451F V1 功能描述:IC FET RF LDMOS 45W H-31265-2 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:GOLDMOS® 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
PTF210451FV1 功能描述:射頻MOSFET電源晶體管 RFP-LDMOS GLDMOS3&7 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
PTF210901 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz
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