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參數(shù)資料
| 型號(hào)： | PTF210901 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz |
| 中文描述： | LDMOS射頻功率場(chǎng)效應(yīng)晶體管90瓦，二一一〇年至2170年兆赫 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大小： | 266K |
| 代理商： | PTF210901 |
Data Sheet
2
2004-01-16
PTF210901
Broadband Circuit Performance
V
DD
= 28 V, I
DQ
= 1050 mA, P
OUT
= 20 W CW
5
2080
10
15
20
25
30
35
40
2120
2160
2200
Frequency (MHz)
G
-35
-30
-25
-20
-15
-10
-5
0
I
Gain
Efficiency
Input Return Loss
Power Sweep, Pulsed Conditions
V
DD
= 28 V, I
DQ
= 1050 mA, f = 2140 MHz,
pulse period = 1 ms, 0.8% duty cycle
45
46
47
48
49
50
51
52
53
54
55
30
31
32
33
34
35
36
37 38
39
40
Input Power (dBm)
O
P-1dB = 50.6 dBm
P-3dB = 51.3 dBm
Ideal
Actual
Electrical Characteristics
at T
CASE
= 25°C unless otherwise indicated
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Drain–Source Breakdown Voltage
V
GS
= 0 V, I
D
= 10 μA
V
(BR)DSS
65
—
—
V
Drain Leakage Current
V
DS
= 28 V, V
GS
= 0 V
I
DSS
—
—
1.0
μA
On–State Resistance
V
GS
= 10 V, V
DS
= 0.1 V
R
DS(on)
—
0.1
—
Operating Gate Voltage
V
DS
= 28 V, I
DQ
= 1050 mA
V
GS
2.5
3.2
4.0
V
Gate Leakage Current
V
GS
= 10 V, V
DS
= 0 V
I
GSS
—
0.01
1.0
μA
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain–Source Voltage
V
DSS
65
V
Gate–Source Voltage
V
GS
–0.5 to +12
V
Junction Temperature
T
J
200
°C
Total Device Dissipation
Above 25°C derate by
P
D
389
2.22
W
W/°C
Storage Temperature Range
T
STG
–40 to +150
°C
Thermal Resistance (T
CASE
= 70°C, 90 W CW)
R
θ
JC
0.45
°C/W
Typical Performance
in broadband test fixture
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| PTF210901E | LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PTF210901E | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz |
| PTF211301 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 130 W, 2110-2170 MHz |
| PTF211301A | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 130 W, 2110-2170 MHz |
| PTF211802 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz |
| PTF211802A | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz |
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