參數(shù)資料
型號(hào): PTF210901
廠商: INFINEON TECHNOLOGIES AG
英文描述: LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz
中文描述: LDMOS射頻功率場(chǎng)效應(yīng)晶體管90瓦,二一一〇年至2170年兆赫
文件頁數(shù): 5/8頁
文件大小: 266K
代理商: PTF210901
Data Sheet
5
2004-01-16
PTF210901
Reference Circuit Schematic for f = 2140 MHz
Circuit Information
DUT
PCB
PTF210901E
0.76 mm [0.030"] thick,
ε
r
= 4.5
LDMOS Transistor
2 oz. copper
TMM4
Microstrip
l
1
l
2
l
3
l
4
l
5
l
6
l
7,
l
8
l
9
l
10
l
11
l
12
Value at 2140 MHz
0.375
λ,
50
0.199
λ,
39.2
0.015
λ,
11.5
0.037
λ,
60.4
0.195
λ,
60.4
0.073
λ,
7.5
0.199
λ,
55.4
0.049
λ,
4.98
0.089
λ,
4.98
0.151
λ,
41.9
0.381
λ,
50
Dimensions: L x W (mm.)
28.45 x 1.40
14.83 x 2.06
1.07 x 10.06
2.90 x 0.97
15.11 x 0.97
4.98 x 17.73
15.32 x 1.14
3.30 x 25.17
5.99 x 25.17
11.30 x 1.85
29.13 x 1.40
Dimensions: L x W (in.)
1.120 x 0.055
0.584 x 0.081
0.042 x 0.396
0.114 x 0.038
0.595 x 0.038
0.196 x 0.698
0.603 x 0.045
0.130 x 0.991
0.236 x 0.991
0.445 x 0.073
1.147 x 0.055
Test Circuit
相關(guān)PDF資料
PDF描述
PTF210901E LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz
PTF211301 LDMOS RF Power Field Effect Transistor 130 W, 2110-2170 MHz
PTF211301A LDMOS RF Power Field Effect Transistor 130 W, 2110-2170 MHz
PTF211802 LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz
PTF211802A LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PTF210901E 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz
PTF211301 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 130 W, 2110-2170 MHz
PTF211301A 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 130 W, 2110-2170 MHz
PTF211802 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz
PTF211802A 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz