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參數(shù)資料
| 型號(hào)： | PTF211301A |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | LDMOS RF Power Field Effect Transistor 130 W, 2110-2170 MHz |
| 中文描述： | LDMOS射頻功率場(chǎng)效應(yīng)晶體管130瓦，2110至2170年兆赫 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 449K |
| 代理商： | PTF211301A |
Data Sheet
2
2004-01-02
PTF211301
Broadband Performance
V
DD
= 28 V, I
DQ
= 1.50 A, P
OUT
= 44 dBm
10
15
20
25
30
35
40
45
2060
2110
2160
2210
Frequency (MHz)
G
-40
-35
-30
-25
-20
-15
-10
-5
I
Input Return Loss
Gain
Efficiency
Intermodulation Distortion Products &
Efficiency vs. Output Power
V
DD
= 28V, I
DQ
= 1.50 A, f = 2140 MHz,
tone spacing = 1 MHz
-70
-65
-60
-55
-50
-45
-40
-35
-30
38
40
42
44
46
48
50
52
Output Power, PEP (dBm)
I
0
5
10
15
20
25
30
35
40
D
IM3
IM5
IM7
Efficiency
DC Characteristics
at T
CASE
= 25°C unless otherwise indicated
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Drain–Source Breakdown Voltage
V
GS
= 0 V, I
DS
= 10 μA
V
(BR)DSS
65
—
—
V
Drain Leakage Current
V
DS
= 28 V, V
GS
= 0 V
I
DSS
—
—
1.0
μA
On–State Resistance
V
GS
= 10 V, V
DS
= 0.1 V
R
DS(on)
—
0.07
—
Operating Gate Voltage
V
DS
= 28 V, I
DQ
= 1.5 A
V
GS
2.5
3.2
4.0
V
Gate Leakage Current
V
GS
= 10 V, V
DS
= 0 V
I
GSS
—
—
1.0
μA
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain–Source Voltage
V
DSS
65
V
Gate–Source Voltage
V
GS
–0.5 to +12
V
Junction Temperature
T
J
200
°C
Total Device Dissipation
P
D
350
W
Above 25°C derate by
2.0
W/°C
Storage Temperature Range
T
STG
–40 to +150
°C
Thermal Resistance (T
CASE
= 70°C, 130 W CW)
R
θ
JC
0.50
°C/W
Typical Performance
(data taken in a production test fixture)
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