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參數(shù)資料
| 型號(hào)： | PTF211301A |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | LDMOS RF Power Field Effect Transistor 130 W, 2110-2170 MHz |
| 中文描述： | LDMOS射頻功率場(chǎng)效應(yīng)晶體管130瓦，2110至2170年兆赫 |
| 文件頁(yè)數(shù)： | 8/9頁(yè) |
| 文件大?。?/td> | 449K |
| 代理商： | PTF211301A |
Data Sheet
8
2004-01-02
PTF211301
Package Outline Specifications
Type
PTF211301A
Package Outline
20260
Package Description
Standard Ceramic, flange
Marking
PTF211301A
Package 20260
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/products
0.038 [.0015] -A-
22.35± 0.23
[.880± .009]
(2X 4.83± 0.50
[.190± .020])
2X 12.70
[.500]
LID 13.21
[.520 ]
23.37± 0.51
[.920± .020]
4X R 1.52
[.060]
2X 3.25
[.128]
1.02
[.040]
+ 0.10
-0.15
+ .004
-.006
0.51
[.020]
27.94
[1.100]
34.04
[1.340]
D
S
G
13.72
[.540]
45° X (2.03
[.080])
SPH 1.57
[.062]
2X 1.63
[.064] R
4.11± 0.38
[.162± .015]
ERA-H-30260-2-1-2302
Notes: Unless otherwise specified
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. Pins: D = drain, S = source, G = gate
4. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]
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