參數(shù)資料
型號: PTF211301A
廠商: INFINEON TECHNOLOGIES AG
英文描述: LDMOS RF Power Field Effect Transistor 130 W, 2110-2170 MHz
中文描述: LDMOS射頻功率場效應(yīng)晶體管130瓦,2110至2170年兆赫
文件頁數(shù): 4/9頁
文件大?。?/td> 449K
代理商: PTF211301A
Data Sheet
4
2004-01-02
PTF211301
Broadband Circuit Impedance
Intermodulation Distortion Products
vs. Tone Spacing
V
DD
= 28 V, I
DQ
= 1.50 A, , P
OUT
= 50.8 dBm PEP,
f = 2140 MHz
-20
-60
-50
-40
-30
0
5
10
15
20
25
30
35
Tone Spacing (MHz)
I
(
3rd Order
7th Order
5th Order
0.96
0.97
0.98
0.99
1.00
1.01
1.02
1.03
-20
20
60
100
Case Temperature (°C)
N
2.25 A
4.50 A
6.75 A
9.00 A
11.25 A
13.50 A
Gate-Source Voltage vs. Case Temperature
Voltage normalized to typical gate voltage.
Series show current.
Typical Performance
(cont.)
Z Source
Z Load
G
S
D
Frequency
Z Source
Z Load
MHz
R
jX
R
jX
2050
6.58
-7.02
1.43
0.19
2110
6.14
-6.76
1.27
0.66
2140
5.96
-6.75
1.19
0.80
2170
5.82
-6.54
1.25
1.09
2220
5.45
-6.36
1.12
1.49
0
0
0
0.1
T
H
S
O
W
A
D
E
<
-
W
A
E
L
N
G
T
S
O
W
A
D
O
D
0
.
2220 MHz
2050 MHz
2220 MHz
2050 MHz
Z Load
Z Source
Z
0
= 50
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