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參數(shù)資料
| 型號： | Q67041-A4712-A2 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Fast S-IGBT in NPT-technology |
| 中文描述： | 快速的S -不擴散核武器條約IGBT的技術(shù) |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 275K |
| 代理商： | Q67041-A4712-A2 |
SGP20N60
SGB20N60, SGW20N60
2
Mar-00
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
R
thJC
0.7
R
thJA
TO-247AC
40
K/W
Electrical Characteristic,
at
T
j
= 25
°
C, unless otherwise specified
Value
Typ.
Parameter
Symbol
Conditions
min.
max.
Unit
Static Characteristic
Collector-emitter breakdown voltage
V
(BR)CES
V
CE(sat)
V
GE
=0V,
I
C
=500
μ
A
V
GE
= 15V,
I
C
=20A
T
j
=25
°
C
T
j
=150
°
C
I
C
=700
μ
A,
V
CE
=
V
GE
V
CE
=600V,
V
GE
=0V
T
j
=25
°
C
T
j
=150
°
C
V
CE
=0V,
V
GE
=20V
V
CE
=20V,
I
C
=20A
600
-
-
Collector-emitter saturation voltage
1.7
-
2
2.4
2.4
2.9
Gate-emitter threshold voltage
V
GE(th)
I
CES
3
4
5
V
Zero gate voltage collector current
-
-
-
-
40
2500
μ
A
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
I
GES
g
fs
-
-
-
100
-
nA
S
14
C
iss
C
oss
C
rss
Q
Gate
-
-
-
-
1100
107
63
100
1320
128
76
130
V
CE
=25V,
V
GE
=0V,
f
=1MHz
pF
V
CC
=480V,
I
C
=20A
V
GE
=15V
TO-247AC
Fehler!
Verweisquelle
konnte nicht
gefunden
werden.
V
GE
=15V,
t
SC
≤
10
μ
s
V
CC
≤
600V,
T
j
≤
150
°
C
nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
L
E
-
-
7
13
-
nH
Short circuit collector current
1)
I
C(SC)
-
200
-
A
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
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