參數(shù)資料
型號(hào): Q67100-Q2157
廠商: SIEMENS AG
英文描述: 4M x 32-Bit EDO-DRAM Module
中文描述: 4米× 32位江戶記憶體模組
文件頁(yè)數(shù): 20/53頁(yè)
文件大?。?/td> 418K
代理商: Q67100-Q2157
HYB 39S64400/800/160BT(L)
64-MBit Synchronous DRAM
Data Book
20
12.99
Package Outlines
GPX09039
22.22
±0.13
1)
1
27
54
28
0.35
+0.1
-0.05
0
1
0.1
10.16
±0.13
±0.2
11.76
±0.1
0.5
Does not include plastic or metal protrusion of 0.15 max per side
Does not include plastic protrusion of 0.25 max per side
Does not include dambar protrusion of 0.13 max per side
1)
54x
±
±
0
-
+
15
±5
15
±5
6
2.5 max
2)
3)
2)
3)
Index Marking
0.8
20.8
26x 0.8 =
0.2
M
54x
Plastic Package, P-TSOPII-54
(400 mil, 0.8 mm lead pitch)
Thin Small Outline Package, SMD
Sorts of Packing
Package outlines for tubes, trays etc. are contained in our
Data Book “Package Information”.
SMD = Surface Mounted Device
Dimensions in mm
相關(guān)PDF資料
PDF描述
Q67100-Q2176 3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module
Q67100-Q2177 3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module
Q67100-Q2178 3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module
Q67100-Q2179 3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module
Q67100-Q2180 3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
Q67100-Q2176 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module
Q67100-Q2177 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module
Q67100-Q2178 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module
Q67100-Q2179 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module
Q67100-Q2180 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module