參數(shù)資料
型號: Q67100-Q2181
廠商: SIEMENS AG
英文描述: 3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module
中文描述: 3.3 2米x 64位江戶內存3.3V的200萬× 72位江戶記憶體模組
文件頁數(shù): 28/53頁
文件大?。?/td> 418K
代理商: Q67100-Q2181
HYB39S64400/800/160BT(L)
64MBit Synchronous DRAM
Semiconductor Group
27
7. Burst Write and Read with Auto Precharge
7.1 Burst Write with Auto-Precharge
7.2 Burst Read with Auto-Precharge
COMMAND
NOP
NOP
NOP
WRITE A
Auto-Precharge
CLK
T0
T2
T1
T3
T4
T5
T6
T7
T8
NOP
BANK A
ACTIVE
NOP
NOP
DIN A0
DIN A1
DIN A0
DIN A1
*
*
DQ’s
CAS latency = 2
DQ’s
CAS latency = 3
Begin Autoprecharge
Bank can be reactivated after trp
t
WR
t
WR
t
RP
t
RP
NOP
COMMAND
READ A
with AP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
t
CK2,
DQ’s
CAS latency = 2
t
CK3,
DQ’s
CAS latency = 3
NOP
CLK
T0
T2
T1
T3
T4
T5
T6
T7
T8
DOUT A0
DOUT A1
DOUT A2
*
*
DOUT A0
DOUT A1
DOUT A2
DOUT A3
Begin Autoprecharge
Bank can be reactivated after trp
t
RP
t
RP
(Burst Length = 4, CAS latency = 2,3)
相關PDF資料
PDF描述
Q67100-Q2182 3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module
Q67100-Q2183 3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module
Q67100-Q2184 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module
Q67100-Q2185 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module
Q67100-Q2186 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module
相關代理商/技術參數(shù)
參數(shù)描述
Q67100-Q2182 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module
Q67100-Q2183 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module
Q67100-Q2184 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module
Q67100-Q2185 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module
Q67100-Q2186 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module