參數(shù)資料
型號(hào): Q67100-Q2181
廠商: SIEMENS AG
英文描述: 3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module
中文描述: 3.3 2米x 64位江戶內(nèi)存3.3V的200萬(wàn)× 72位江戶記憶體模組
文件頁(yè)數(shù): 33/53頁(yè)
文件大?。?/td> 418K
代理商: Q67100-Q2181
HYB39S64400/800/160BT(L)
64MBit Synchronous DRAM
Semiconductor Group
32
11. Power on Sequence and Auto Refresh (CBR)
Inputs must be
stable for
200
μ
s
DQM
AP
DQ
Addr.
BS
RP
Command
All Banks
Precharge
Hi-Z
~
t
1st Auto Refresh
Command
~
~
~
~
~
~
~
SPT03913
Mode Register
Set Command
Address Key
8th Auto Refresh
Command
~
t
RC
~
~
~
~
~
~
~
Command
Any
Minimum of 8 Refresh Cycles are required
T8
WE
CAS
RAS
CS
CKE
CLK
required
~
~
~
~
~
~
~
T3
is
~
~
Level
High
T0
T2
T1
T5
T4
T7
T6
T18
2 Clock min.
~
~
~
~
~
~
~
T13
~
~
T10
T9
T12
T11
T14
T15
T17
T16
T20
T19
T22
T21
相關(guān)PDF資料
PDF描述
Q67100-Q2182 3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module
Q67100-Q2183 3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module
Q67100-Q2184 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module
Q67100-Q2185 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module
Q67100-Q2186 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
Q67100-Q2182 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module
Q67100-Q2183 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module
Q67100-Q2184 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module
Q67100-Q2185 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module
Q67100-Q2186 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module