參數(shù)資料
型號: Q67100-Q2181
廠商: SIEMENS AG
英文描述: 3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module
中文描述: 3.3 2米x 64位江戶內(nèi)存3.3V的200萬× 72位江戶記憶體模組
文件頁數(shù): 45/53頁
文件大小: 418K
代理商: Q67100-Q2181
HYB39S64400/800/160BT(L)
64MBit Synchronous DRAM
Semiconductor Group
44
18. Random Row Read (Interleaving Banks) with Precharge
18.1 CAS Latency = 2
Ax2
t
BS
Addr.
DQ
DQM
AP
Bank B
Activate
Command
Hi-Z
Command
Bank B
Read
RBx
RBx
RCD
t
CBx
Read
Command
Activate
Command
Bank B
Bank A
Command
Bank A
Bx2
Bx0
AC2
Bx1
Activate
Bx3
Bx4
RAx
RAx
Command
Bank B
Precharge
Bx6
Bx5
Bx7
Ax0
Ax1
CAx
RP
t
RBy
RBy
CS
WE
CAS
RAS
CKE
CLK
T0
High
t
CK2
T1
T2
T8
T4
T3
T5
T6
T7
T11
T9
T10
T12
T13
SPT03925
Bank B
Command
Ax5
Ax3
Ax4
Read
Ax6
Ax7
CBy
By1
By0
Burst Length = 8, CAS Latency = 2
T19
T16
T15
T14
T17
T18
T20
T21 T22
相關PDF資料
PDF描述
Q67100-Q2182 3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module
Q67100-Q2183 3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module
Q67100-Q2184 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module
Q67100-Q2185 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module
Q67100-Q2186 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module
相關代理商/技術參數(shù)
參數(shù)描述
Q67100-Q2182 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module
Q67100-Q2183 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module
Q67100-Q2184 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module
Q67100-Q2185 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module
Q67100-Q2186 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module