參數(shù)資料
型號(hào): Q67100-Q2185
廠商: SIEMENS AG
英文描述: 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module
中文描述: 3.3 4米× 64位江戶內(nèi)存3.3分× 72位江戶記憶體模組
文件頁(yè)數(shù): 6/53頁(yè)
文件大小: 418K
代理商: Q67100-Q2185
HYB 39S64400/800/160BT(L)
64-MBit Synchronous DRAM
Data Book
6
12.99
Block Diagram: 4 Bank
×
1M
×
16 SDRAM
Memory
Array
Bank 1
4096 x 256
x 16 Bit
Memory
Array
Bank 2
4096 x 256
x 16 Bit
Memory
Array
Bank 3
4096 x 256
x 16 Bit
SPB04120
Column Address
Counter
Row
Decoder
Memory
Array
Bank 0
4096 x 256
x 16 Bit
C
S
Row
Decoder
S
Row
Decoder
Row
Decoder
C
S
Row Address
Buffer
Column Address
Buffer
Refresh Counter
S
A0 - A11,
BA0, BA1
A0 - A7, AP,
BA0, BA1
Column Addresses
Row Addresses
Input Buffer
Output Buffer
DQ0 - DQ15
Control Logic &
Timing Generator
C
C
C
R
C
W
D
D
C
C
相關(guān)PDF資料
PDF描述
Q67100-Q2186 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module
Q67100-Q2187 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module
Q67100-Q2188 3.3V 8M x 64-Bit EDO-DRAM Module 3.3V 8M x 72-Bit EDO-DRAM Module
Q67100-Q2189 3.3V 8M x 64-Bit EDO-DRAM Module 3.3V 8M x 72-Bit EDO-DRAM Module
Q67100-Q2192 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
Q67100-Q2186 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module
Q67100-Q2187 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module
Q67100-Q2188 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 8M x 64-Bit EDO-DRAM Module 3.3V 8M x 72-Bit EDO-DRAM Module
Q67100-Q2189 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 8M x 64-Bit EDO-DRAM Module 3.3V 8M x 72-Bit EDO-DRAM Module
Q67100-Q2192 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module