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參數(shù)資料
| 型號(hào)： | QM75E3Y-2H |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | HIGH POWER SWITCHING USE INSULATED TYPE |
| 中文描述： | 大功率開關(guān)使用絕緣型 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 114K |
| 代理商： | QM75E3Y-2H |
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM75E2Y/E3Y-2H
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
(Transistor part including D1, T
j
=25
°
C)
Symbol
V
CEX (SUS)
V
CEX
V
CBO
V
EBO
I
C
–I
C
P
C
I
B
–I
CSM
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Conditions
I
C
=1A, V
EB
=2V
V
EB
=2V
Emitter open
Collector open
DC
DC (forward diode current)
T
C
=25
°
C
DC
Peak value of one cycle of 60Hz (half wave)
Ratings
1000
1000
1000
7
75
75
500
4
750
Unit
V
V
V
V
A
A
W
A
A
ABSOLUTE MAXIMUM RATINGS
(Diode part (D2), T
j
=25
°
C)
Symbol
V
RRM
V
RSM
V
R (DC)
I
DC
I
FSM
I
2t
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
DC current
Surge (non-repetitive) forward current
I
2t
for fusing
Conditions
DC circuit, resistive, inductive load
Peak value of one cycle of 60Hz (half wave)
Value for one cycle of surge current
Ratings
1000
1100
800
75
1500
9.45
×
10
3
Unit
V
V
V
A
A
A
2
s
ABSOLUTE MAXIMUM RATINGS
(Common)
Symbol
T
j
T
stg
V
iso
—
—
Parameter
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Conditions
Charged part to case, AC for 1 minute
Main terminal screw M5
Mounting screw M6
Typical value
Ratings
–40~150
–40~125
2500
1.47~1.96
15~20
1.96~2.94
20~30
250
Unit
°
C
°
C
V
N·m
kg·cm
N·m
kg·cm
g
Unit
mA
mA
mA
V
V
V
—
μ
s
μ
s
μ
s
°
C/W
°
C/W
°
C/W
Limits
Min.
—
—
—
—
—
—
75/100
—
—
—
—
—
—
Symbol
I
CEX
I
CBO
I
EBO
V
CE (sat)
V
BE (sat)
–V
CEO
h
FE
t
on
t
s
t
f
R
th (j-c) Q
R
th (j-c) R
R
th (c-f)
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Test conditions
V
CE
=1000V, V
EB
=2V
V
CB
=1000V, Emitter open
V
EB
=7V
I
C
=75A, I
B
=1.5A
–I
C
=75A (diode forward voltage)
I
C
=75A, V
CE
=2.8V/5V
V
CC
=600V, I
C
=75A, I
B1
=–I
B2
=1.5A
Transistor part
Diode part
Conductive grease applied
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
1.0
1.0
100
2.5
3.5
1.8
—
2.5
15
3.0
0.25
1.2
0.13
ELECTRICAL CHARACTERISTICS
(Transistor part including D1, T
j
=25
°
C)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| QM75E3Y-H | HIGH POWER SWITCHING USE INSULATED TYPE |
| QM75HA-H | HIGH POWER SWITCHING USE INSULATED TYPE |
| QM75TF-HB | HIGH POWER SWITCHING USE INSULATED TYPE |
| QM75TX-HB | MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM75TX-H | HIGH POWER SWITCHING USE INSULATED TYPE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| QM75E3Y-H | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| QM75HA-H | 制造商:n/a 功能描述:Darlington Module |
| QM75TF-HB | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| QM75TX-H | 制造商:n/a 功能描述:Darlington Module 制造商:Mitsubishi Electric 功能描述: |
| QM75TX-HB | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER SWITCHING USE INSULATED TYPE |
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