參數(shù)資料
型號: QM75E3Y-2H
廠商: Mitsubishi Electric Corporation
英文描述: HIGH POWER SWITCHING USE INSULATED TYPE
中文描述: 大功率開關(guān)使用絕緣型
文件頁數(shù): 4/6頁
文件大?。?/td> 114K
代理商: QM75E3Y-2H
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM75E2Y/E3Y-2H
HIGH POWER SWITCHING USE
INSULATED TYPE
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
C
V
V
C
S
t
o
,
s
,
f
μ
s
BASE CURRENT
I
B
(A)
COLLECTOR CURRENT
I
C
(A)
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
S
t
s
,
f
μ
s
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
BASE REVERSE CURRENT
–I
B2
(A)
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
CASE TEMPERATURE
T
C
(
°
C)
C
I
C
C
I
C
D
3
10
3
10
2
10
1
10
0
10
0
10
1
10
2
10
2
10
1
10
0
10
–1
10
10
0
1
10
2
10
3
10
–2
10
–1
10
0
10
1
10
100
80
60
40
20
00
20
60
100 120
160
40
80
140
10
30
50
70
90
160
00
1000
800
600
400
200
20
40
60
80
100
120
140
I
B2
=–4A
T
j
=125°C
I
B2
=–2A
2
10
7
5
4
3
2
10
7
5
4
3
2
3 4 5 7
0
10
2 3 4 5 7
1
10
–1
10
2
0
10
t
s
T
j
=25°C
T
j
=125°C
I
B1
=1.5A
V
CC
=600V
I
C
=75A
t
f
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
4
4
4
DC
t
w
=50μs
100μs
1ms
200μs
7
5
3
2
7
5
3
2
7
5
3
2
0
5
4
4
4
4
3
2
1
T
j
=25°C
T
j
=125°C
I
C
=30A
I
C
=75A
I
C
=50A
I
C
=100A
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
4
4
4
T
j
=25°C
T
j
=125°C
V
CC
=600V
I
B1
=–I
B2
=1.5A
t
s
t
on
t
f
T
C
=25°C
NON-REPETITIVE
COLLECTOR
DISSIPATION
SECOND BREAK-
DOWN AREA
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
QM75E3Y-H 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE
QM75HA-H 制造商:n/a 功能描述:Darlington Module
QM75TF-HB 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE
QM75TX-H 制造商:n/a 功能描述:Darlington Module 制造商:Mitsubishi Electric 功能描述:
QM75TX-HB 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER SWITCHING USE INSULATED TYPE