參數(shù)資料
型號(hào): QM75E3Y-2H
廠商: Mitsubishi Electric Corporation
英文描述: HIGH POWER SWITCHING USE INSULATED TYPE
中文描述: 大功率開(kāi)關(guān)使用絕緣型
文件頁(yè)數(shù): 6/6頁(yè)
文件大?。?/td> 114K
代理商: QM75E3Y-2H
Feb.1999
I
r
r
μ
C
S
I
F
REVERSE RECOVERY CHARACTERISTICS
(VS. di/dt) (TYPICAL)
2
10
7
5
3
2
T
j
=150°C
MAXIMUM SURGE CURRENT
REVERSE RECOVERY CHARACTERISTICS
(VS. I
F
) (TYPICAL)
2
10
7
5
3
2
CONDUCTION TIME (CYCLES AT 60Hz)
FORWARD CURRENT
I
F
(A)
di/dt (A/
μ
s)
I
r
r
μ
C
MITSUBISHI TRANSISTOR MODULES
QM75E2Y/E3Y-2H
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM FORWARD CHARACTERISTIC
F
I
F
FORWARD VOLTAGE
V
F
(V)
PERFORMANCE CURVES (Diode part (D2))
Z
t
°
C
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC
10
10
1.0
TIME (s)
t
r
μ
s
t
r
μ
s
1
7
5
3
2
10
0
7
5
3
2
10
0
10
1
10
2
10
3
10
–1
10
–1
10
2
10
1
10
0
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
10
10
0
1
10
2
10
3
10
–1
10
2
10
1
10
0
10
–1
10
–2
10
–3
10
0
0
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
10
2
10
10
7
5
4
3
2
10
7
5
4
3
2
0
400
800
1200
1600
2000
1800
200
600
1000
1400
0.6
1.0
1.4
1.8
2.2
T
j
=25°C
7
5
3
2
7
5
3
2
7
5
3
2
4
4
4
I
rr
t
rr
T
j
=25°C
T
j
=150°C
V
R
=600V
di/dt=–150A/μs
Q
rr
7
5
3
2
7
5
3
2
7
5
3
2
0.2
0.4
0.6
0.8
0
5
3
2
7
5
3
2
4
4
4
4
4
7
5
3
2
7
5
3
2
7
5
3
2
4
4
4
T
j
=25°C
V
R
=300V
I
F
=75A
I
rr
Q
rr
t
rr
相關(guān)PDF資料
PDF描述
QM75E3Y-H HIGH POWER SWITCHING USE INSULATED TYPE
QM75HA-H HIGH POWER SWITCHING USE INSULATED TYPE
QM75TF-HB HIGH POWER SWITCHING USE INSULATED TYPE
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
QM75E3Y-H 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE
QM75HA-H 制造商:n/a 功能描述:Darlington Module
QM75TF-HB 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE
QM75TX-H 制造商:n/a 功能描述:Darlington Module 制造商:Mitsubishi Electric 功能描述:
QM75TX-HB 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER SWITCHING USE INSULATED TYPE