參數(shù)資料
型號: QS5U12
廠商: Rohm CO.,LTD.
英文描述: Small switching (30V, 2.0A)
中文描述: 小開關(guān)(30V的,2.0安培)
文件頁數(shù): 1/5頁
文件大?。?/td> 91K
代理商: QS5U12
QS5U12
Transistors
Small switching (30V, 2.0A)
Rev.A
1/4
QS5U12
z
Features
1) The QS5U12 combines Nch MOSFET with a
Schottky barrier diode in a single TSMT5 package.
2) Nch MOSFET have a low on-state resistance with a
fast switching.
3) Nch MOSFET is reacted a low voltage drive (2.5V).
4) The Independently connected Schottky barrier diode
have a low forward voltage.
z
Applications
Load switch, DC / DC conversion
z
Structure
Silicon N-channel MOSFET
Schottky Barrier DIODE
z
Packaging specifications
z
External dimensions
(Unit : mm)
Each lead has same dimensions
Abbreviated symbol :
U21
0 to 0.1
2.9
±
0.1
1.9
±
0.2
0.95
2
±
0
0.95
(1)
(5)
(3)
(2)
(4)
0
0.85
±
0.1
1.0MAX
0.7
±
0.1
+
0.1
0.4
0
1
±
0
+
0.1
0.16
Package
Code
Taping
TR
3000
Basic ordering unit (pieces)
QS5U12
Type
z
Equivalent circuit
(1) Anode
(2) Source
(3) Gate
(4) Drain
(5) Cathode
2
1 ESD PROTECTION DIODE
2 BODY DIODE
1
(1)
(2)
(3)
(5)
(4)
相關(guān)PDF資料
PDF描述
QS5U16 272 POS 1.27MM PITCH BGA SOCKET
QS5U17 Small switching (30V, 2.0A)
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QS5U26 Pch Treueh MOSFET with a Schottky barrier Diode
QS5U27 Small switching (−20V, −1.5A)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
QS5U12_1 制造商:ROHM 制造商全稱:Rohm 功能描述:2.5V Drive Nch+SBD MOS FET
QS5U12TR 功能描述:MOSFET N-CH 30V 2A TSMT5 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
QS5U13 制造商:ROHM 制造商全稱:Rohm 功能描述:Small switching (30V, 2.0A)
QS5U13_06 制造商:ROHM 制造商全稱:Rohm 功能描述:2.5V Drive NchSBD MOS FET
QS5U13TR 功能描述:MOSFET N-CH 30V 2A TSMT5 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube