參數(shù)資料
型號: QS5U21
廠商: Rohm CO.,LTD.
英文描述: Small switching (?20V, ?1.5A)
中文描述: 小開關(guān)(?20V的,?1.5A的)
文件頁數(shù): 1/4頁
文件大?。?/td> 64K
代理商: QS5U21
QS5U21
Transistor
Small switching (–20V, –1.5A)
1/4
QS5U21
z
Features
1) The QS5U21 conbines Pch MOSFET with a
Schottky barrier diode in a single TSMT5 package.
2) Pch MOSFET have a low on-state resistance
with a fast switching.
3) Pch MOSFET is reacted a low voltage drive(2.5V)
4) The Independently connected Schottky barrier diode
have a low forward voltate.
z
Applications
Load switch, DC/DC conversion
z
External dimensions
(Units : mm)
1
2
(4)
(2)
(5)
(3)
(1)
0.4
0.16
0.95
0.95
1.9
2.9
Abbreviated symbole : U21
0.05
+
0.1
0
+
0
0
+
+
+
0.2
0.1
Each lead has same dimensions
0
0
1.0MAX
0.85
+
0.1
0.7
+
0.1
0 to 0.1
+
0.1
z
Structure
Silicon P-channel MOSFET
Schottky Barrier DIODE
z
Packaging specifications
Taping
QS5U21
Type
TR
3000
Package
pieces
(
)
Code
z
Equivalent circuit
(1)
(2)
(3)
(4)
(5)
1
(
1
)
ANODE
(
2
)
SOURCE
(
3
)
GATE
(
4
)
DRAIN
(
5
)
CATHODE
2
1 ESD PROTECTION DIODE
2 BODY DIODE
z
Absolute maximum ratings
(Ta=25
°
C)
< MOSFET >
VDSS
VGSS
ID
IS
Tch
ISP
IDP
Tstg
20
±
12
±
1.5
0.75
0.3
150
DRAIN
SOURCE VOLTAGE
GATE
SOURCE VOLTAGE
DRAIN CURRENT
SBODY DIODE
)
TOTAL POWER DISSIPATION
CHANNEL TEMPERATURE
RANGE OF STRAGE TEMPERATURE
CONTINUOUS
PULSED
CONTINUOUS
PULSED
±
6.0
< Di >
REPETITIVE PEAK REVERSE VOLTAGE
VRM
VR
IF
IFSM
Tj
25
20
1.0
3.0
125
REVERSE VOLTAGE
FORWARD CURRENT
FORWARD CURRENT SURGE PEAK
JUNCTION TEMPERATURE
< MOSFET AND Di >
PD
1.0
40
125
60HZ / 1CYC.
Parameter
Symbol
V
V
A
V
V
A
A
C
W/TOTAL/MOUNTED ON
A CERAMIC BOARD
Limits
Unit
P<
μ
s DUTY CYCLE <
A
A
A
P<
μ
s DUTY CYCLE <
C
C
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