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參數(shù)資料
| 型號： | QS5U16 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | 272 POS 1.27MM PITCH BGA SOCKET |
| 中文描述： | 小開關(guān)（30V的，2.0安培） |
| 文件頁數(shù)： | 3/5頁 |
| 文件大小： | 91K |
| 代理商： | QS5U16 |
QS5U16
Transistors
z
Electrical characteristic curves
<MOSFET>
Rev.A
3/4
0.0
0.5
1.0
1.5
2.0
2.5
GATE-SOURCE VOLTAGE : V
GS
(V)
0.001
0.01
0.1
1
10
D
D
Fig.1
Typical Transfer Characteristics
V
DS
=
10V
Pulsed
Ta
=
25
°
C
Ta
=
25
°
C
Ta
=
75
°
C
Ta
=
125
°
C
0.1
1
10
10
100
1000
DRAIN CURRENT : I
D
(A)
S
O
R
D
)
Fig.2 Static Drain-Source On-State
Resistance vs. Drain Current
V
GS
=
4.5V
Pulsed
Ta
=
25
°
C
Ta
=
25
°
C
Ta
=
75
°
C
Ta
=
125
°
C
0.1
1
10
10
100
1000
DRAIN CURRENT : I
D
(A)
S
O
R
D
)
Fig.3 Static Drain-Source On-State
Resistance vs. Drain Current
V
GS
=
4.0V
Pulsed
Ta
=
25
°
C
Ta
=
25
°
C
Ta
=
75
°
C
Ta
=
125
°
C
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current
DRAIN CURRENT : I
D
(A)
S
O
R
D
)
0.1
1
10
10
100
1000
V
GS
=
2.5V
Pulsed
Ta
=
25
°
C
Ta
=
25
°
C
Ta
=
75
°
C
Ta
=
125
°
C
0
1
2
3
4
5
6
7
8
9
10
GATE-SOURCE VOLTAGE : V
GS
(V)
0
100
200
300
S
O
R
D
)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
Ta
=
25
°
C
Pulsed
I
D
=
2A
I
D
=
1A
0.1
1
10
DRAIN CURRENT : I
D
(A)
10
100
1000
S
O
R
D
)
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current
Ta
=
25
°
C
Pulsed
V
GS
=
2.5V
V
GS
=
4V
V
GS
=
4.5V
0.0
0.5
1.0
1.5
SOURCE-DRAIN VOLTAGE : V
SD
(V)
0.01
0.1
1
10
S
S
V
GS
=
0V
Pulsed
Fig.7 Reverse Drain Current
vs. Source-Drain Current
Ta
=
25
°
C
Ta
=
25
°
C
Ta
=
75
°
C
Ta
=
125
°
C
0.01
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : V
DS
(V)
C
100
1000
10
Ta
=
25
°
C
f
=
1MHz
V
GS
=
0V
Fig.8 Typical Capacitance
vs. Drain-Source Voltage
C
iss
C
oss
C
rss
0.01
0.1
1
10
DRAIN CURRENT : I
D
(A)
1
10
100
1000
S
Fig.9 Switching Characteristics
t
d (off)
t
d (on)
t
r
t
f
Ta
=
25
°
C
V
DD
=
15V
V
GS
=
4.5V
R
G
=
10
Pulsed
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