參數(shù)資料
型號： QS5U17
廠商： Rohm CO.,LTD.
英文描述： Small switching (30V, 2.0A)
中文描述： 小開關(guān)（30V的，2.0安培）
文件頁數(shù)： 2/5頁
文件大?。?/td> 91K
代理商： QS5U17
QS5U17
Transistors
z
Absolute maximum ratings
(Ta=25
°
C)
<MOSFET>
Rev.A
2/4
V
RM
V
R
I
F
I
FSM
Tj
Parameter
V
V
A
A
A
A
°
C
V
DSS
V
GSS
I
D
I
DP
I
S
I
SP
Tch
Symbol
30
12
±
2.0
±
8.0
0.8
3.2
150
Pw
≤
10
μ
s, Duty cycle
≤
1%
Pw
≤
10
μ
s, Duty cycle
≤
1%
V
A
A
°
C
20
1.0
3.0
125
60Hz
1cyc.
V
25
Limits
Unit
Channel temperature
<Di>
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
W / Total / Mounted on a ceramic board
°
C
P
D
Tstg
1.0
40 to 125
Total power dissipation
Range of Storage temperature
z
Electrical characteristics
(Ta=25
°
C)
<MOSFET>
<MOSFET AND Di>
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Continuous
Pulsed
Source current
(Body diode)
Parameter
Symbol
I
GSS
V
(BR) DSS
I
DSS
V
GS (th)
Y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
Q
g
Q
gs
Q
gd
Min.
30
0.5
1.5
±
10
1
1.5
100
107
154
3.9
μ
A
V
μ
A
V
m
V
GS
=±
12V / V
DS
=
0V
I
D
=
1mA, / V
GS
=
0V
V
DS
=
30V / V
GS
=
0V
V
DS
=
10V / I
D
=
1mA
I
D
=
2.0A, V
GS
=
4.5V
I
D
=
2.0A, V
GS
=
4V
I
D
=
2.0A, V
GS
=
2.5V
V
DS
=
10V, I
D
=
2.0A
V
DS
=
10V
V
GS
=
0V
f
=
1MHz
I
D
=
1.0A
V
DD
15V
V
GS
=
4.5V
I
D
=
2.0A
Typ.
Max.
Unit
Conditions
71
76
110
175
50
25
8
10
21
8
2.8
0.6
0.8
R
DS (on)
m
m
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
<MOSFET>Body diode (source-drain)
Forward voltage
<Di>
VSD
1.2
V
I
S
=
3.2A / V
GS
=
0V
V
F
I
R
0.45
200
V
μ
A
I
F
=
1.0A
V
R
=
20V
Pulsed
V
DD
15
V
V
GS
4.5V
R
L
=
15
R
GS
=
10
Forward voltage
Reverse leakage
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source
charge
Gate-drain
charge
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參數(shù)描述
QS5U17_1 制造商:ROHM 制造商全稱:Rohm 功能描述:2.5V Drive Nch+SBD MOS FET
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QS5U21TR 功能描述:MOSFET P-CH 20V 1.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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