參數(shù)資料
型號： QS6J3
廠商： Rohm CO.,LTD.
英文描述： Small switching (−20V, −1.5A)
文件頁數(shù)： 2/4頁
文件大?。?/td> 62K
代理商： QS6J3
QS6J3
Transistors
z
Electrical characteristics
(Ta=25
°
C)
Parameter
2/3
Pulsed
z
Body diode
(Source-drain)
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source
charge
Gate-drain
charge
Symbol
I
GSS
V
(BR) DSS
I
DSS
V
GS (th)
Y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
Q
g
Q
gs
Q
gd
Min.
20
0.7
1.0
±
10
1
2.0
215
235
430
μ
A
V
μ
A
V
m
V
GS
=±
12V, V
DS
=
0V
I
D
=
1mA, V
GS
=
0V
V
DS
=
20V, V
GS
=
0V
V
DS
=
10V, I
D
=
1mA
I
D
=
1.5A, V
GS
=
4.5V
I
D
=
1.5A, V
GS
=
4V
I
D
=
0.75A, V
GS
=
2.5V
V
DS
=
10V, I
D
=
0.75A
V
DS
=
10V
V
GS
=
0V
f
=
1MHz
I
D
=
0.75A
V
DD
15V
V
GS
=
4.5V
I
D
=
1.5A
Typ.
Max.
Unit
Conditions
155
170
310
270
40
35
10
12
45
20
3.0
0.8
0.85
R
DS (on)
m
m
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
DD
15
V
V
GS
=
4.5V
R
L
=
20
R
G
=
10
R
L
=
10
R
G
=
10
V
SD
1.2
V
I
S
=
0.75A, V
GS
=
0V
Forward voltage
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
z
Electrical characteristic curves
0.01
0.1
1
10
100
DRAIN-SOURCE VOLTAGE :
V
DS
(V)
C
100
1000
10
Ta
25
°
C
f
=
1MHz
V
GS
=
0V
Fig.1 Typical Capacitance vs.
Drain-Source Voltage
C
iss
C
oss
C
rss
1
10
100
1000
0.1
1
10
DRAIN CURRENT :
I
D
(A)
S
Fig.2 Switching Characteristics
t
d (off)
t
d (on)
t
r
t
f
Ta
=
25
°
C
V
DD
=
15V
V
GS
=
4.5A
R
G
=
10
Pulsed
Ta
=
25
°
C
V
DD
=
15V
I
D
=
1.5A
R
G
=
10
Pulsed
0
0.5
1
1.5
2
2.5
3
3.5
TOTAL GATE CHARGE : Qg (nC)
0
1
2
3
4
5
6
7
8
G
V
G
Fig.3
Dynamic Input Characteristics
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
GATE-SOURCE VOLTAGE :
V
GS
(V)
0.001
0.01
0.1
1
10
D
I
D
Fig.4
Typical Transfer Characteristics
V
DS
=
10V
Pulsed
Ta
=
25
°
C
Ta
=
25
°
C
Ta
=
75
°
C
Ta
=
125
°
C
0
2
4
6
8
10
12
GATE-SOURCE VOLTAGE :
V
GS
(V)
0
100
200
300
400
500
S
O
R
D
)
Fig.5 Static Drain-Source On-State
Resistance vs. Gate-Source
Voltage
Ta
=
25
°
C
Pulsed
I
D
=
1.5A
I
D
=
0.75A
0.0
0.5
1.0
1.5
2.0
SOURCE-DRAIN VOLTAGE :
V
SD
(V)
0.01
0.1
1
10
S
I
S
Fig.6 Source Current vs.
Source-Drain Voltage
Ta
=
25
°
C
V
GS
=
0V
Pulsed
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