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參數(shù)資料
| 型號： | QSB363C |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 光敏三極管 |
| 英文描述： | SUBMINIATURE PLASTIC SILICON PHOTOTRANSISTOR |
| 中文描述： | PHOTO TRANSISTOR DETECTOR |
| 封裝： | PLASTIC, T-3/4 PACKAGE-2 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 106K |
| 代理商： | QSB363C |
PARAMETER
Peak Sensitivity Wavelength
Reception Angle
Dark Current
Collector-Emitter Breakdown
Emitter-Collector Breakdown
On-State Collector Current
TEST CONDITIONS
SYMBOL
MIN.
—
—
—
30
4
0.7
TYP.
880
±12
—
—
—
—
MAX.
—
—
100
—
—
—
UNITS
nm
Deg.
nA
V
V
mA
D
PS
0
I
D
BV
CEO
BV
ECO
I
C
(on)
V
CE
= 10 V, Ee = 0
I
C
= 1 mA
I
E
= 100 μA
Ee = 0.5 mW/cm2
V
CE
= 5 V
(5)
Ee = 0.5 mW/cm2
I
C
= 0.1 mA
(5)
V
CC
= 5 V, R
L
= 100
1
I
C
= 0.2 mA
Saturation Voltage
V
CE (SAT)
—
—
0.4
V
Rise Time
Fall Time
t
r
t
f
—
—
5
5
—
—
μs
μs
ELECTRICAL / OPTICAL CHARACTERISTICS
(T
A
=25°C)
NOTES
1. Derate power dissipation linearly 1.33 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Pulse conditions: tp = 100 μs, T = 10 ms.
5.
D
= 940 nm, GaAs.
Parameter
Symbol
T
OPR
T
STG
T
SOL-I
T
SOL-F
V
CE
V
EC
P
D
Rating
-40 to +85
-40 to +85
240 for 5 sec
260 for 10 sec
30
5
100
Unit
°C
°C
°C
°C
V
V
mW
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)
(2,3,4)
Soldering Temperature (Flow)
(2,3)
Collector Emitter Voltage
Emitter Collector Voltage
Power Dissipation
(1)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
SUBMINIATURE PLASTIC SILICON
PHOTOTRANSISTOR
QSB363C
www.fairchildsemi.com
2 OF 5
8/2/01
DS300233
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| QSB363C_05 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Subminiature Plastic Silicon Infrared Phototransistor |
| QSB363CGR | 功能描述:光電晶體管 T-3/4 PHOTO SENSOR RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| QSB363CYR | 功能描述:光電晶體管 T-3/4 PHOTO SENSOR RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| QSB363CZR | 功能描述:光電晶體管 T-3/4 PHOTO SENSOR RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| QSB363GR | 功能描述:光電晶體管 Phototransistor Si Infrared RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
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