參數(shù)資料
型號(hào): R5F562N7ADFP#V0
廠商: Renesas Electronics America
文件頁數(shù): 113/148頁
文件大?。?/td> 0K
描述: MCU 32BIT FLASH 384KROM 100LQFP
產(chǎn)品培訓(xùn)模塊: RX Compare Match Timer
RX DMAC
標(biāo)準(zhǔn)包裝: 1
系列: RX600
核心處理器: RX
芯體尺寸: 32-位
速度: 100MHz
連通性: EBI/EMI,I²C,SCI,SPI,USB
外圍設(shè)備: DMA,LVD,POR,PWM,WDT
輸入/輸出數(shù): 72
程序存儲(chǔ)器容量: 384KB(384K x 8)
程序存儲(chǔ)器類型: 閃存
RAM 容量: 64K x 8
電壓 - 電源 (Vcc/Vdd): 2.7 V ~ 3.6 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 8x10/12b,D/A 1x10b
振蕩器型: 內(nèi)部
工作溫度: -40°C ~ 85°C
封裝/外殼: 100-LQFP
包裝: 托盤
2004 Microchip Technology Inc.
DS39609B-page 65
PIC18F6520/8520/6620/8620/6720/8720
5.3
Reading the Flash Program
Memory
The TBLRD instruction is used to retrieve data from
program memory and places it into data RAM. Table
reads from program memory are performed one byte at
a time.
TBLPTR points to a byte address in program space.
Executing TBLRD places the byte pointed to into
TABLAT. In addition, TBLPTR can be modified
automatically for the next table read operation.
The internal program memory is typically organized by
words. The Least Significant bit of the address selects
between the high and low bytes of the word. Figure 5-4
shows the interface between the internal program
memory and the TABLAT.
FIGURE 5-4:
READS FROM FLASH PROGRAM MEMORY
EXAMPLE 5-1:
READING A FLASH PROGRAM MEMORY WORD
(Even Byte Address)
Program Memory
(Odd Byte Address)
TBLRD
TABLAT
TBLPTR = xxxxx1
FETCH
Instruction Register
(IR)
Read Register
TBLPTR = xxxxx0
MOVLW
CODE_ADDR_UPPER
; Load TBLPTR with the base
MOVWF
TBLPTRU
; address of the word
MOVLW
CODE_ADDR_HIGH
MOVWF
TBLPTRH
MOVLW
CODE_ADDR_LOW
MOVWF
TBLPTRL
READ_WORD
TBLRD*+
; read into TABLAT and increment
MOVF
TABLAT, W
; get data
MOVWF
WORD_EVEN
TBLRD*+
; read into TABLAT and increment
MOVFW
TABLAT, W
; get data
MOVWF
WORD_ODD
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