參數(shù)資料
型號： RF1K4915796
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 6.3A I(D) | SO
中文描述： 晶體管| MOSFET的| N溝道| 30V的五（巴西）直| 6.3AI（四）|蘇
文件頁數(shù)： 2/8頁
文件大小： 262K
代理商： RF1K4915796
2002 Fairchild Semiconductor Corporation
RF1K49093 Rev. B
Absolute Maximum Ratings
T
A
= 25
o
C Unless Otherwise Specified
RF1K49093
-12
-12
±
10
UNITS
V
V
V
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20k
, Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (Pulse width = 5s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed (Figure 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Pulsed Avalanche Rating (Figure 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Power Dissipation
T
A
= 25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
2.5
Refer to Peak Current Curve
Refer to UIS Curve
A
2
0.016
-55 to 150
W
W/
o
C
o
C
300
260
o
C
o
C
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
A
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V, (Figure 13)
V
GS
= V
DS
, I
D
= 250
μ
A, (Figure 12)
-12
-
-
V
Gate Threshold Voltage
V
GS(TH)
-1
-
-2
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -12V,
V
GS
= 0V
T
A
= 25
o
C
T
A
= 150
o
C
-
-
-1
μ
A
-
-
-50
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
10V
-
-
±
100
nA
Drain to Source On Resistance
r
DS(ON)
I
D
= 2.5A, V
GS
= -5V, (Figure 9, 11)
V
DD
= -6V, I
D
≈
2.5A,
R
L
= 2.40
, V
GS
= -5V,
R
GS
= 25
(Figure 10)
-
-
0.130
Turn-On Time
t
ON
-
-
115
ns
Turn-On Delay Time
t
d(ON)
-
25
-
ns
Rise Time
t
r
-
65
-
ns
Turn-Off Delay Time
t
d(OFF)
-
40
-
ns
Fall Time
t
f
-
45
-
ns
Turn-Off Time
t
OFF
-
-
110
ns
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to -10V
V
DD
= -9.6V,
I
D
= 2.5A,
R
L
= 3.84
(Figure 15)
-
19
24
nC
Gate Charge at -5V
Q
g(-5)
V
GS
= 0V to -5V
-
10
14
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to -1V
-
0.8
1.1
nC
Input Capacitance
C
ISS
V
DS
= -10V, V
GS
= 0V,
f = 1MHz (Figure 14)
-
775
-
pF
Output Capacitance
C
OSS
-
550
-
pF
Reverse Transfer Capacitance
C
RSS
-
150
-
pF
Thermal Resistance Junction-to-Ambient
R
θ
JA
Pulse width = 1s
Device mounted on FR-4 material
-
-
62.5
o
C/W
Source to Drain Diode Ratings and Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= -2.5A
-
-
-1.25
V
Reverse Recovery Time
t
rr
I
SD
= -2.5A, dI
SD
/dt = -100A/
μ
s
-
-
55
ns
RF1K49093
相關(guān)PDF資料
PDF描述
RF1K4922196 TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 60V V(BR)DSS | 2.5A I(D) | SO
RF1K4922496 TRANSISTOR | MOSFET | PAIR | COMPLEMENTARY | 30V V(BR)DSS | 3.5A I(D) | SO
RF1K4908696 TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 3.5A I(D) | SO
RF1K4908896 TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 3.5A I(D) | SO
RF1S25N06SM9A TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 25A I(D) | TO-263AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RF1K49211 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RF1K4921196 功能描述:MOSFET Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RF1K49221 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RF1K4922196 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 60V V(BR)DSS | 2.5A I(D) | SO
RF1K49223 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*