參數(shù)資料
型號： RF4E20N50S
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 20A I(D) | TO-268AA
中文描述： 晶體管| MOSFET的| N溝道| 500V五（巴西）直| 20A條（?。﹟對268AA
文件頁數(shù)： 2/8頁
文件大?。?/td> 186K
代理商： RF4E20N50S
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RF4E20N50S
500
500
20
12
80
±
20
250
2.0
960
-55 to 150
UNITS
V
V
A
A
A
V
W
W/
o
C
mJ
o
C
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1). . . . . . . . . . . . . . . . . . . . . . .V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . E
AS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
300
260
o
C
o
C
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V, (Figure 10)
500
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A
2
-
4
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0V
-
-
25
μ
A
V
DS
= 0.8 x Rated BV
DSS,
, V
GS
= 0V T
J
= 125
o
-
-
250
μ
A
On-State Drain Current (Note 2)
I
D(ON)
V
DS
> I
D(ON)
x r
DS(ON)MAX
, V
GS
= 10V
20
-
-
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V
-
-
±
100
nA
Drain to Source On Resistance (Note 2)
r
DS(ON)
I
D
= 11A, V
GS
= 10V, (Figures 8, 9)
-
-
0.240
Forward Transconductance (Note 2)
g
fs
V
DS
≥
50V, I
DS
> 11A, (Figure 12)
13
19
-
S
Turn-On Delay Time
t
d(ON)
V
DD
= 250V, I
D
= 20A, R
GS
= 4.3
,
R
D
= 12.5
,
V
GS
= 10V, (Figures 17, 18) MOSFET Switching
Times are Essentially Independent of Operating
Temperature
-
23
35
ns
Rise Time
t
r
-
81
120
ns
Turn-Off Delay Time
t
d(OFF)
-
85
130
ns
Fall Time
t
f
-
65
98
ns
Total Gate Charge
(Gate to Source + Gate-Drain)
Q
g(TOT)
V
GS
= 10V, I
D
= 20A, V
DS
= 0.8 x Rated BV
DSS,
I
G(REF)
= 1.5mA, (Figures 14, 19, 20)
Gate Charge is Essentially Independent of
OperatingTemperature
-
120
190
nC
Gate to Source Charge
Q
gs
-
18
-
nC
Gate to Drain
“
Miller
”
Charge
Q
gd
-
62
-
nC
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V, f = 1MHz, (Figure 10)
-
4100
-
pF
Output Capacitance
C
OSS
-
480
-
pF
Reverse Transfer Capacitance
C
RSS
-
84
-
pF
RF4E20N50S
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