參數(shù)資料
型號(hào)： RF4E20N50S
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 20A I(D) | TO-268AA
中文描述： 晶體管| MOSFET的| N溝道| 500V五（巴西）直| 20A條（丁）|對(duì)268AA
文件頁數(shù)： 4/8頁
文件大?。?/td> 186K
代理商： RF4E20N50S
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
Typical Performance Curves
(Continued)
1
0.1
10
-3
10
-5
10
-4
10
-3
10
-2
0.1
1
10
Z
θ
J
,
o
C
t
1
, RECTANGULAR PULSE DURATION (S)
SINGLE PULSE
P
DM
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
t
1
t
2
0.1
0.02
0.01
0.2
0.5
0.05
10
-2
1
2
5
10
2
5
10
2
2
5
10
3
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
3
5
2
10
2
5
2
10
5
2
1
5
2
0.1
I
D
,
SINGLE PULSE
T
J
= MAX RATED
T
C
= 25
o
C
DS(ON)
AREABY r
OPERATION IN THIS
10
μ
s
100
μ
s
1ms
10ms
DC
I
D
,
0
50
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100
150
200
8
16
24
32
40
250
80
μ
s PULSE TEST
0
V
GS
= 10V
V
GS
= 6.0V
V
GS
= 5.5V
V
GS
= 5.0V
V
GS
= 4.5V
V
GS
= 4.0V
0
8
0
4
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
8
12
20
16
24
I
D
,
32
16
40
V
GS
= 10V
80
μ
s PULSE TEST
V
GS
= 4.0V
V
GS
= 5.5V
V
GS
= 6.0V
V
GS
= 5.0V
V
GS
= 4.5V
V
DS
≥
50V
80
μ
s PULSE TEST
10
2
10
1
0.1
10
-2
0
2
V
GS
, GATE TO SOURCE VOLTAGE (V)
4
6
8
10
I
D
,
T
J
= 150
o
C
T
J
= 25
o
C
RF4E20N50S
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