參數(shù)資料
型號(hào)： RF4E20N50S
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 20A I(D) | TO-268AA
中文描述： 晶體管| MOSFET的| N溝道| 500V五（巴西）直| 20A條（?。﹟對(duì)268AA
文件頁(yè)數(shù)： 3/8頁(yè)
文件大小： 186K
代理商： RF4E20N50S
Internal Drain Inductance
L
D
Measured from the
Drain Lead, 6mm (0.25in)
from Package to Center
of Die
Modified MOSFET Sym-
bol Showing the Internal
Device
Inductances
-
5.0
-
nH
Internal Source Inductance
L
S
Measured from the
Source Lead, 6mm
(0.25in) from Header to
Source Bonding Pad
-
13
-
nH
Thermal Resistance Junction to Case
R
θ
JC
-
-
0.50
o
C/W
Thermal Resistance Junction to Ambient
R
θ
JA
Free Air Operation
-
-
30
o
C/W
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
L
S
L
D
G
D
S
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
SD
Modified MOSFET Sym-
bol Showing the Integral
Reverse
P-N Junction Rectifier
-
-
20
A
Pulse Source to Drain Current
(Note 3)
I
SDM
-
-
80
A
Source to Drain Diode Voltage (Note 2)
V
SD
T
J
= 25
o
C, I
SD
= 20A, V
GS
= 0V, (Figure 13)
T
J
= 25
o
C, I
SD
= 20A, dI
SD
/dt = 100A/
μ
s
T
J
= 25
o
C, I
SD
= 20A, dI
SD
/dt = 100A/
μ
s
-
-
1.8
V
Reverse Recovery Time
t
rr
280
580
1200
ns
Reverse Recovery Charge
Q
RR
3.8
8.1
18
μ
C
NOTES:
2. Pulse test: pulse width
≤
300
μ
s, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 50V, starting T
J
= 25
o
C, L = 4.3mH, R
GS
= 25
,
Peak I
AS
= 20A (Figures 15, 16).
G
D
S
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
0
50
100
150
0
T
C
, CASE TEMPERATURE (
o
C)
P
0.2
0.4
0.6
0.8
1.0
1.2
0
50
100
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
150
25
75
125
20
16
12
8
4
RF4E20N50S
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