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參數資料
| 型號： | RH40N25FSY3 |
| 廠商： | 意法半導體 |
| 英文描述： | N-channel 250V - 0.084ohm - TO-254AA Rad-hard low gate charge STripFET TM Power MOSFET |
| 中文描述： | N溝道250V - 0.084ohm -對254AA抗輻射低柵極電荷STripFET商標功率MOSFET |
| 文件頁數： | 1/13頁 |
| 文件大?。?/td> | 219K |
| 代理商： | RH40N25FSY3 |
PRELIMINARY DATA
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
March 2007
Rev 2
1/13
13
STRH40N25FSY3
N-channel 250V - 0.084
- TO-254AA
Rad-hard low gate charge STripFET Power MOSFET
Features
■
Low R
DS(on)
■
Fast switching
■
Single event effect (SEE) hardened
■
Low total gate charge
■
Light weight
■
100% avalanche tested
■
Application oriented characterization
■
Hermetically sealed
■
Heavy ion SOA
■
100kRad TID
■
SEL & SEGR with 34Mev/cm2/mg LET ions
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to improve immunity to
space effect. It is therefore suitable as power
switch in mainly high-efficiency DC-DC converters
and Motor Control applications. It is also intended
for any application with low gate charge drive
requirements.
Applications
■
Satellite
■
High reliability applications
Internal schematic diagram
Type
V
DSS
STRH40N25FSY3
250V
TO-254AA
www.st.com
Order codes
Part number
Marking
Package
Packaging
STRH40N25FSY1
(1)
STRH40N25FSY3
(2)
1.
Mil temp range
RH40N25FSY1
TO-254AA
Individual strip pack
2.
Space flights parts (full ESA flow screening)
RH40N25FSY3
TO-254AA
Individual strip pack
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