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參數(shù)資料
| 型號： | RH40N25FSY3 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-channel 250V - 0.084ohm - TO-254AA Rad-hard low gate charge STripFET TM Power MOSFET |
| 中文描述： | N溝道250V - 0.084ohm -對254AA抗輻射低柵極電荷STripFET商標(biāo)功率MOSFET |
| 文件頁數(shù)： | 4/13頁 |
| 文件大?。?/td> | 219K |
| 代理商： | RH40N25FSY3 |
Electrical characteristics
STRH40N25FSY3
4/13
2
Electrical characteristics
(T
CASE
= 25°C unless otherwise specified)
2.1
Pre-irradiation
Table 4.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
80% BV
Dss
10
μA
I
GSS
Gate body leakage current
(V
DS
= 0)
V
GS
= ±16V
±
100
nA
BV
DSS
Drain-to-source breakdown
voltage
I
D
= 1mA,
V
GS
= 0V
250
V
V
GS(th)
Gate threshold voltage
V
DS
=V
GS
, I
D
= 1mA
2
4.5
V
R
DS(on)
Static drain-source on
resistance
V
GS
= 12V, I
D
= 20A
0.084
0.1
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
= 0V, f=1MHz,
V
GS
=12V
9100
650
45
pF
pF
pF
Q
g
Q
gs
Q
gd
Total gate charge
Gate-to-source charge
Gate-to-drain (“Miller”)
charge
V
DD
= 200V, I
D
= 40A,
V
GS
=12V
202
34
58
280
47
80
nC
nC
nC
R
G
Gate input resistance
f=1MHz Gate DC Bias=0
Test signal level=20mV
open drain
1.4
3
Table 6.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
V
DD
= 125V, I
D
=40 A,
R
G
= 4.7
,
V
GS
= 12V
33
80
123
145
ns
ns
ns
ns
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