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參數(shù)資料
| 型號： | RH40N25FSY3 |
| 廠商： | 意法半導體 |
| 英文描述： | N-channel 250V - 0.084ohm - TO-254AA Rad-hard low gate charge STripFET TM Power MOSFET |
| 中文描述： | N溝道250V - 0.084ohm -對254AA抗輻射低柵極電荷STripFET商標功率MOSFET |
| 文件頁數(shù)： | 5/13頁 |
| 文件大?。?/td> | 219K |
| 代理商： | RH40N25FSY3 |
STRH40N25FSY3
Electrical characteristics
5/13
2.2
Post-irradiation
The ST Rad-Hard Power MOSFETs are tested to verify the radiation capability. The
technology is extremely resistant to assurance well functioning of the device inside the
radiation environments. Every manufacturing lot is tested for total ionizing dose.
(@Tj=25°C up to 100Krad
(a)
)
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
I
SD
I
SDM (1)
V
SD (2)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
36
144
A
A
2.
Pulsed: pulse duration = 300μs, duty cycle 1.5%
Forward on voltage
I
SD
= 40A, V
GS
= 0
1.5
V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 40A, di/dt = 100A/μs
V
DD
= 50V, Tj = 150°C
484
8.4
35
ns
μC
A
a.
According to ESCC 22900 specification, Co60 gamma rays, dose rags:0.1rad/sec.
Table 8.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
I
DSS
Zero gate voltage drain current
(V
GS
= 0)
80% BV
Dss
10
μA
I
GSS
Gate body leakage current
(V
DS
= 0)
V
GS
= ±16V
±
100
nA
BV
DSS
Drain-to-source breakdown
voltage
I
D
= 1mA,
V
GS
= 0V
250
V
V
GS(th)
Gate threshold voltage
V
DS
=V
GS
, I
D
= 1mA
2
4.5
V
R
DS(on)
Static drain-source on
resistance
V
GS
= 12V, I
D
= 20A
0.084
0.1
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