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參數(shù)資料
| 型號： | RMWM26001 |
| 英文描述： | Analog IC |
| 中文描述： | 模擬IC |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 123K |
| 代理商： | RMWM26001 |
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 1
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
Description
4 mil substrate
Conversion loss 7.5 dB (Upconverter)
Conversion loss 8.5 dB (Downconverter)
No DC bias required
Chip size 1.95 mm x 1.5 mm
Features
The RMWM26001 is a 26 GHz Mixer designed to be used in point to point radios, point to multi-point
communications, LMDS, and other millimeter wave applications. In conjunction with other Raytheon amplifiers,
multipliers and mixers it forms part of a complete 23 and 26 GHz transmit/receive chipset. The RMWM26001 is a
GaAs MMIC diode mixer utilizing Raytheon’s 0.25μm power PHEMT process. The MMIC can be used as both an
Upconverter and a Downconverter and is sufficiently versatile to serve in a variety of mixer applications.
RMWM26001
26 GHz Mixer MMIC
Electrical
Characteristics
(At 25°C),
50
system,
LO = +12 dBm
Parameter
RF Frequency Range
LO Frequency Range
IF Frequency Range
(Up-Conv)
IF Frequency Range
(Down-Conv)
LO Drive Power
Up Conversion Loss
Down Conversion Loss
1
Conversion Loss
Variation vs Freq.
Min
21
Typ
Max
26.5
Unit
GHz
GHz
17 - 24.1
4.02 - 4.12
GHz
2.552 - 2.602
GHz
dBm
dB
dB
12
7.5
8.5
16
10
2
dB
Parameter
RF Port Return Loss
LO Port Return Loss
IF Port Return Loss
LO to RF Isolation
LO to IF Isolation
Input P1dB at IF Port
(Up-Conv)
Input P1dB at RF Port
(Down-Conv)
Min
Typ
12
10
8
20
35
Max Unit
dB
dB
dB
dB
dB
8
dBm
9
dBm
Note:
1. Device 100% RF tested as downconverter only. LO drive = +12 dBm, RF Pin = -10 dBm, IF = 2.6 GHz.
Absolute
Maximum
Ratings
Parameter
Symbol
Value
Units
RF Input Power (from 50
source)
Operating Baseplate Temperature
Storage Temperature Range
P
IN
T
C
T
stg
+25
dBm
°C
°C
-30 to +85
-55 to +125
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal
conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat,
plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes.
Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for
PHEMT devices. Note that the backside of the chip is gold plated and is used as RF ground.
These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination
of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including
the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent
static discharges through the device.
Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical
allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012” long corresponding
to a typically 2 mil between the chip and the substrate material.
Application
Information
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