參數資料
型號： S12VREGV1D
廠商： Motorola, Inc.
英文描述： MC9S12DT128 Device User Guide V02.09
中文描述： MC9S12DT128設備的用戶手冊V02.09
文件頁數： 112/138頁
文件大?。?/td> 2083K
代理商： S12VREGV1D
MC9S12DT128 Device User Guide — V02.09
112
The setup time can be ignored for this operation.
A.3.1.4 Mass Erase
Erasing a NVM block takes:
The setup time can be ignored for this operation.
A.3.1.5 Blank Check
The time it takes to perform a blank check on the Flash or EEPROM is dependant on the location of the
first non-blank word starting at relative address zero. It takes one bus cycle per word to verify plus a setup
of the command.
Table A-11 NVM Timing Characteristics
Conditions are shown in
Table A-4
unless otherwise noted
Num C
Rating
Symbol
Min
Typ
Max
Unit
1
D External Oscillator Clock
f
NVMOSC
0.5
50
1
NOTES
:
1. Restrictions for oscillator in crystal mode apply!
2. Minimum Programming times are achieved under maximum NVM operating frequency f
NVMOP
and maximum bus frequency
f
bus
.
MHz
2
D Bus frequency for Programming or Erase Operations
f
NVMBUS
1
MHz
3
D Operating Frequency
f
NVMOP
150
200
kHz
4
P Single Word Programming Time
t
swpgm
46
2
74.5
3
3. Maximum Erase and Programming times are achieved under particular combinations of f
NVMOP
and bus frequency f
bus
.
Refer to formulae in Sections
A.3.1.1 - A.3.1.4
for guidance.
4. Row Programming operations are not applicable to EEPROM
5. Minimum Erase times are achieved under maximum NVM operating frequency f
NVMOP
.
6. Minimum time, if first word in the array is not blank
7. Maximum time to complete check on an erased block
μ
s
5
D Flash Row Programming consecutive word
4
t
bwpgm
20.4
2
31
3
μ
s
6
D Flash Row Programming Time for 32 Words
4
t
brpgm
678.4
2
1035.5
3
μ
s
7
P Sector Erase Time
t
era
20
5
26.7
3
ms
8
P Mass Erase Time
t
mass
100
5
133
3
ms
9
D Blank Check Time Flash per block
t
check
11
6
32778
7
t
cyc
10
D Blank Check Time EEPROM per block
t
check
11
6
1034
7
t
cyc
t
era
4000
1
f
NVMOP
---------------------
≈
t
mass
20000
1
f
NVMOP
---------------------
≈
t
check
location t
cyc
10 t
cyc
+
≈
相關PDF資料
PDF描述
S12MMCV4 MC9S12DT128 Device User Guide V02.09
S12MMCV4D MC9S12DT128 Device User Guide V02.09
S12MSCANV2 MC9S12DT128 Device User Guide V02.09
S12MSCANV2D MC9S12DT128 Device User Guide V02.09
S20100 Silicon Power Rectifier
相關代理商/技術參數
參數描述
S12WP 功能描述:繼電器插座與硬件 RoHS:否 制造商:Song Chuan 附件類型: 相關繼電器系列: 端接類型: 極數:
S12XFSTARTERKITE 制造商:Freescale Semiconductor 功能描述:MOTS12XFSTARTERKITE 2 NODE STARTER KIT
S12XXXH 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:The S12xxxH series of SCRs uses a high performance MESA
S-12Z 制造商:Triad Magnetics 功能描述:
S12ZVMBEVB 功能描述:S12ZVMBEVB EVALUATION BOARD 制造商:nxp usa inc. 系列:* 零件狀態(tài):在售 標準包裝:1
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*