參數(shù)資料
型號(hào): S1336-18BU
廠商: Hamamatsu Photonics
英文描述: MOSFET, Switching; VDSS (V): 80/-80; ID (A): 3.4/-2.6; Pch : -; RDS (ON) typ. (ohm) @10V: 0.09/0.165; RDS (ON) typ. (ohm) @4V[4.5V]: 0.1/0.2; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 400/930; toff (µs) typ: 0.09/0.165; Package: SOP-8
中文描述: 硅光電二極管對(duì)高功率紫外線監(jiān)測(cè)和紫外可見,精密光度法
文件頁數(shù): 1/2頁
文件大?。?/td> 99K
代理商: S1336-18BU
Features
l
TO-18 package with UV glass window
l
High sensitivity from the UV to near infrared range
l
High reliability versus high power UV radiation
Applications
l
Mercury lamp (
λ
=254 nm) monitor
l
Excimer laser (KrF:
λ
=248 nm) monitor
l
Other UV detection
P H O T O D I O D E
Si photodiode
S1226-18BU, S1336-18BU
For high power UV monitor, and UV to visible, precision photometry
S1226-18BU and S1336-18BU are Si photodiodes encapsulated in a TO-18 package with a UV glass window. These photodiodes have high
sensitivity from the UV to near infrared range and operate reliably when detecting high power UV radiation (such as from mercury lamps).
I
General ratings / Absolute maximum ratings
Absolute maximum ratings
Reverse
voltage
V
R
Max.
(V)
Active
area size
Effective
active area
Operating
temperature
Topr
(°C)
Storage
temperature
Tstg
(°C)
Type No.
Window
material
Package
(mm)
(mm
2
)
S1226-18BU
S1336-18BU
UV glass
TO-18
1.1 × 1.1
1.2
5
-40 to +100
-50 to +125
I
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Photo sensitivity
S
(A/W)
Short circuit
current
Isc
100
lx
Min. Typ.
Spectral
response
range
λ
Peak
sensitivity
wavelength
λ
p
λ
p
200 nm
Min. Typ. (μA) (μA)
Dark
current
I
D
V
R
=10 mV
Max.
(pA)
2
20
Temp.
coefficient
of I
D
T
CID
Rise time
tr
V
R
=0 V
R
L
=1 k
Terminal
capacitance
Ct
V
R
=0 V
f=10 kHz
(pF)
35
20
Shunt
resistance
Rsh
V
R
=10 mV
(G
)
Min.
5
0.5
NEP
Type No.
(nm)
(nm)
720
960
(times/°C)
1.12
1.15
(μs)
0.15
0.1
Typ.
50
2
(W/Hz
1/2
)
1.6 × 10
-15
5.7 × 10
-15
S1226-18BU
S1336-18BU
190 to 1000
190 to 1100
0.36
0.50
0.5
1.0
0.66
1.2
0.06 0.075
1
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