參數(shù)資料
型號(hào): S1336-18BU
廠商: Hamamatsu Photonics
英文描述: MOSFET, Switching; VDSS (V): 80/-80; ID (A): 3.4/-2.6; Pch : -; RDS (ON) typ. (ohm) @10V: 0.09/0.165; RDS (ON) typ. (ohm) @4V[4.5V]: 0.1/0.2; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 400/930; toff (µs) typ: 0.09/0.165; Package: SOP-8
中文描述: 硅光電二極管對(duì)高功率紫外線監(jiān)測(cè)和紫外可見(jiàn),精密光度法
文件頁(yè)數(shù): 2/2頁(yè)
文件大?。?/td> 99K
代理商: S1336-18BU
Si photodiode
S1226-18BU, S1336-18BU
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 200
4
Hamamatsu Photonics K.K.
Cat. No. KSPD1037E02
Jul. 2004 DN
1
a
3
2.54 ± 0.2
CONNECTED TO CASE
WINDOW
4.7 ± 0.1
5.4 ± 0.2
0.45
LEAD
a
S1226-18BU
2.4
S1336-18BU
2.3
The UV glass may extend a maximum of 0.1 mm
above the upper surface of the cap.
0.1
0
190
400
600
800
1000
0.3
0.2
(Typ. Ta=25 C)
0.4
0.5
0.6
0.7
P
WAVELENGTH (nm)
S1226-18BU
S1336-18BU
I
Spectral response
KSPDB0136EA
T
C
WAVELENGTH (nm)
(Typ. )
0
190
400
600
800
1000
+1.0
+0.5
+1.5
-0.5
S1226-18BU
S1336-18BU
KSPDB0137EA
R
LOAD RESISTANCE (
)
(Typ. Ta
=
25
C, V
R
=
0 V)
10
2
10 ns
10
3
10
4
10
5
S1226-18BU
S1336-18BU
100 ns
1
μ
s
10
μ
s
100
μ
s
1 ms
D
REVERSE VOLTAGE
(V)
(Typ. Ta
=
25
C)
0.01
100 fA
0.1
1
10
1 pA
10 pA
100 pA
1 nA
10 nA
S1336-18BU
S1226-18BU
S
AMBIENT TEMPERATURE (
C)
(Typ. V
R
=
10 mV)
20
0
20
40
60
80
10 k
100 k
1 M
10 M
100 M
1 G
10 G
100 G
1 T
S1226-18BU
S1336-18BU
KSPDB0138EA
KSPDB0139EB
KSPDB0140EA
KSPDA0126EA
I
Photo sensitivity temperature characteristic
I
Dark current vs. reverse voltage
I
Rise time vs. load resistance
I
Dimensional outline (unit: mm)
I
Shunt resistance vs. ambient temperature
2
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